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    GE200NB60S Search Results

    GE200NB60S Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GE200NB60S
    		STMicroelectronics N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT Original PDF 263.63KB 13
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    GE200NB60S Price and Stock

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    STMicroelectronics STGE200NB60S

    IGBT MOD 600V 200A 600W ISOTOP
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    SGS Semiconductor Ltd GE200NB60S

    N-CHANNEL 150A-600V-ISOTOP LOW DROP POWERMESH IGBT Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA GE200NB60S 40
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    GE200NB60S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STGE200NB60S

    Abstract: GE200NB60S JESD97 M1113
    Contextual Info: GE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat GE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current


    Original     		STGE200NB60S STGE200NB60S GE200NB60S JESD97 M1113 PDF

    SCHEMATIC WITH IGBTS

    Abstract: GE200NB60S JESD97 STGE200NB60S
    Contextual Info: GE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat GE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current


    Original     		STGE200NB60S STGE200NB60S SCHEMATIC WITH IGBTS GE200NB60S JESD97 PDF

    GE200NB60S

    Abstract: STGE200NB60S Date Code Marking STMicroelectronics diode icl 707
    Contextual Info: GE200NB60S N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE GE200NB60S • ■ ■ ■ ■ VCES 600 V VCE sat (typ.) IC TC 1.2 V 1.3 V 150 A 200 A 100°C 25°C HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)


    Original     		STGE200NB60S GE200NB60S STGE200NB60S Date Code Marking STMicroelectronics diode icl 707 PDF