GE C22B Search Results

SCR GE C20F

Abstract: scr C20F scr c20d ge c30b GE C20F GE C20B GE scr C20f GE SCR c20b GE C1220 scr GE C33B
Contextual Info: PHASE CONTROL SCR’s MEDIUM CURRENT 7.5 TO 25 AMPERES CIO GE TYPE CM 2N1770A-77A* 2N1770-78 JED EC C36 C31 -33 C l 22 — — — 2N1842-50 — — — C20-22 C3Q-32 C37 C15 E L E C T R IC A L S P E C IF IC A T IO N S V O LTA G E RANGE 25-400 25-600 25-600

GE C20B

Abstract: S1207BH S200BR S200Bl MCR21B BP2M SK3577 C20B BTY79-200R 2N3755
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SCRs, VDRM 5 10 S2006FS21 S2006LS2 S2006FS31 S2006LS3 S2006Fl S2006L S1007BJ S1010BJ BTY79-200R S1005BH ~~~~~~~ 15 20 2N616B HSE5054 HS27 SK3577 T7F200CRC T7F200URC 2N3937 Cl0B g~~~ 25 30 C20B C22B TM2007

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

ESM692

Abstract: ESM693 sbru CB-97 ESM 200
Contextual Info: *ESM 692 *ESM 693 PNP S IL IC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R TR A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X Compl. of ESM 642, ESM 643 Preferred device Dispositif recommandé • High breakdown voltage H aute Tension de claquage

ses 554

Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
Contextual Info: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12

2N2891

Abstract: 2N2890 C22B
Contextual Info: 2N 2890 2N 2891 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLANAR E P ITAXIAU X - LF large signal amplification high voltage A m plification B F grands signaux (haute tension) • Switching up to 1 A 80 V v CEO h21E(1A) \J 30 - 90

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

bu126

Contextual Info: BU 126 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS T O R S I L I C I U M N P N , M E S A T R IP L E D IF F U S E P R E L IM IN A R Y D A T A N O T IC E P R E L / M I N A I R E T h e BU 1 2 6 ty p e is a fast high voltage transis­

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

CL1620

Contextual Info: BSV 15 BSV 16 PNP SILICON TRANSISTORS, EPITAXIAL PLANAR T R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X Compì, of BSX 45, BSX 46 • LF amplification Amplification BF - Low speed switching v CEO Commutation tente —40 V 1-60 V BSV 15

fonction

Abstract: DE 113 BU113 deflexion
Contextual Info: BU 113 N PN S IL IC O N T R A N S IS T O R ,T R IP L E D IF F U S E D M E S A TR AN S IS TO R S IL IC IU M ,MESA T R IP LE D IF F U S E B U 1 1 3 transistor is prim a rily intended fo r use in ho rizontal deflexion o u tp u t stage color television receivers

BFW16A

Abstract: bfw16 transistor bfw16a BFW 16
Contextual Info: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

Contextual Info: When you choose Hammond - you choose. Experience: Building quality racks & cabinets for over 60 years! Sampling from our oldest surviving catalog G53 - printed in 1939 Support: In stock factory & distributor inventory! The best products in the world are no good

VAC t60403

Abstract: ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
Contextual Info: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-10-07 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

C520D

Abstract: rft lautsprecher vqe23 1PP75 Transistoren DDR MAA725 Radio Fernsehen Elektronik U706D Halbleiterinformation U311D
Contextual Info: H a lb le ite rin fo rm a tio n e n - 74 M itte ilu n g aus dem VEB K o m b in a t H a lb le ite rw e rk F ra n k fu rt/O . Ing. W O L F R A M a FISCHER S o w jetische T ra n s is to re n 2 5 Germ anium -npn-Legierungstransistoren M n 35 bis M FI 38 A Teil 1

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

Katalog tesla tranzistor

Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Contextual Info: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Nokia 3220 LCD

Abstract: ILI9163
Contextual Info: ILI9163 a-Si TFT LCD Single Chip Driver 132RGBx162 Resolution and 262K color Datasheet Version: V0.18 Document No.: ILI9163DS_V0.18.pdf ILI TECHNOLOGY CORP. 8F, No.38, Taiyuan St., Jhubei City, Hsinchu County, Taiwan 302, R.O.C. Tel.886-3-5600099; Fax.886-3-56-00585

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik