GE 521 Search Results

16C70

Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
Contextual Info: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea J16TE2 Series 2-Stage Thermoelectrically Cooled Ge General J16TE Series detectors are Judson's high-quality Ge photodiodes mounted on thermoelectric coolers for reduced dark current, improved sensitivity and superior

mccb 60947-2 max zs

Abstract: 60947-2 MAX EARTH LOOP IMPEDANCE FG400N FD63N gps1bh FD160N-FD160H 60947-2 max zs Tripping unit FK800 FE160N FD160N
Contextual Info: GE Consumer & Industrial Power Protection Record Plus Application guide GE imagination at work Record Plus E.3 Introduction E.4 Protection against short-circuit E.8 Personnel protection direct and indirect contact E.14 Selectivity/Discrimination E.20 Back-up protection

galvanized iron thermal conductivity

Abstract: ral 7035 paint GE circuit breaker 1 pole C2 type cl mcb trip standard BUSBAR calculation free IEC -320 C19 terminal RAL7024 885032 IEC 60439-1 enclosure BUSBAR calculation
Contextual Info: GE Consumer & Industrial Power Protection New QuiXtra 630 Low Voltage distribution boards up to 630A GE imagination at work QuiXtra™630 Introduction A.2 Advantages A.4 Applications A.5 Product description A.7 Features and benefits A.8 Kit structure A.10

6MBP75RS120

Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Contextual Info: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible

BUSBAR calculation free

Abstract: GE circuit breaker 1 pole C2 885007 BUSBAR calculation aluminium BUSBAR calculation V2432E RAL9006 enclosure BUSBAR calculation
Contextual Info: GE Energy Industrial Solutions New QuiXtra 630 Low Voltage distribution boards up to 630A GE imagination at work QuiXtra™630 Introduction A.2 Advantages A.4 Applications A.5 Product description A.7 Features and benefits A.8 Kit structure A.10 Main technical characteristics

Contextual Info: OPERATING CHARACTERISTICS AT 25° C AMBIENT MIN. L ED C H A R A C T E R I S T I C S FORWARD V OL T A GE REVERSE V OL T A GE LUMINOUS 5 INTENSITY VIEWING 2 & SPECTRAL HALFWI DTH ABSOLUTE MA X I M U M PE A K PULSED AVERAGE 2.00 2.6 V lF = 20 mA V lR = 10 0/i A

Philips MARKING CODE

Abstract: Philips Logic Marking Code marking code 10 sot23 BP317 PSSI3120CA
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

ST 9340

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

SC88 SOT363 plastic package Ht0 MARKING CODE

Abstract: marking Ht0 sot363 HT0 SOT363 MARKING 5F SOT363 PUMH10 marking 301
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge MBD128 PUMH10 NPN resistor-equipped transistors Product specification 2000 Aug 01 Philips Semiconductors Product specification NPN resistor-equipped transistors PUMH10 FEATURES • Transistors with built-in bias resistors R1 and R2

bc 541

Abstract: GE capacitors 0280 130 026 GE capacitors GEC004 GE 23a capacitors 0523a 10 micro farad 25 v electrolytic capacitor BB EI 382 0179 BE EI 382 0179 295A6016P33
Contextual Info: GEC 004 2009 Power Electrolytic Capacitors GE Capacitors by Regal-Beloit 1946 West Cook Road, Fort Wayne, Indiana 46818 USA 260 416-5460 Email: capacitors@regalbeloit.com GEC Phone: – 02(260) / 09 416-5400 Fax: www.gecapacitors.com www.gecapacitors.com

sot231a

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA

F450

Abstract: 23m501
Contextual Info: GE Power Electrolytic Capacitors 85 ° C Product 200 to 450 WVDC 150 to 20,000 uF 23M SERIES STANDABO HIGH RIPPLE CURRENT LINE • Broad Capacitance Range • Increased Volumetric Efficiency • Low ESR • Standard Ratings Generai Specifications CAPACITANCE RANGE -

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.

TDA2579

Abstract: ic tda2595 TDA8432 TDA2595 860mhz rf amplifier circuit diagram monitor horizontal ic voltage video mixer circuit diagram video amplifier circuits for cctv 50MHz-300MHz cctv circuit diagram
Contextual Info: Signelics TDA8432 Computer-Controlled Deflection Processor for Video Displays Objective Specification Linear Products DESCRIPTION FEATURES The TDA8432 is an l2C bus-controlled deflection processor analog picture ge­ ometry processor which contains the control and drive functions of the deflec­

BSH103

Abstract: MGT207 Philips RF PREAMP LQFP48 OQ2541BHP OQ2541BU philips 6975
Contextual Info: INTEGRATED CIRCUITS DATA SHEET OQ2541BHP; OQ2541BU SDH/SONET data and clock recovery unit STM1/4/16 OC3/12/48 GE Product specification File under Integrated Circuits, IC19 2000 Sep 18 Philips Semiconductors Product specification SDH/SONET data and clock recovery unit

PT 1017

Abstract: BSH103 LQFP48 OQ2541 OQ2541HP OQ2541U OM5801 GE IC data handbook
Contextual Info: INTEGRATED CIRCUITS DATA SHEET OQ2541HP; OQ2541U SDH/SONET data and clock recovery unit STM1/4/16 OC3/12/48 GE Product specification Supersedes data of 1999 Mar 19 File under Integrated Circuits, IC19 1999 May 27 Philips Semiconductors Product specification

M32 250C fuse

Abstract: electronic transformer halogen 12v 50W 220V LED Bulb circuit diagram t8 36w electronic ballast vossloh specification for 11W G23 Pin CFL bulb xenon arc lamp ignitor metal halide electronic ballast circuit 150 ELECTRONIC BALLAST DIAGRAM 400W 1W HIGH BRIGHT LED 230V CIRCUITS ELECTRONIC BALLAST DIAGRAM 28w
Contextual Info: Contents GE Lighting Incandescent Reflector Heat Lamps 3 Halogen Precise MR11, Precise™ ConstantColor™ MR16, Precise™ Bright MR16, Precise™ Alutech™ MR16, TAL 50, UV-Control CeriTite™, DEQ, Halogen IR™ DEQ, Haloglobe & BTT, Halo T, PAR 30

Contextual Info: SIEMENS MCT6 DUAL PHOTOTRANSISTOR OPTOCOUPLER Current Transfer Ratio, 20% Minimum Two Isolated Channels Per Package Isolation Text Voltage, 5300 VACRUS Underwriters Lab File #E52744 VDE #0884 Available with Option 1 DESCRIPTION P a cka ge D im e n sio n s in Inches m m

220v AC voltage stabilizer schematic diagram

Abstract: Gerapid 6007 GE aeg diode Si 61 L 220v AC voltage stabilizer grounding schematic diagram Gerapid GE gerapid 2607 Thyristor pulse transformer AEG siemens master trip relay gerapid 4207 GE circuit breaker 1 pole C2
Contextual Info: GE Consumer & Industrial Power Protection High Speed DC Circuit Breaker Gerapid 2607, 4207, 6007, 8007 with arc chute 1X2, 1X4, 2X2, 2X3, 2X4 USER`S GUIDE S47183-e 01/2008 Design and specifications are subject to change without notice 1 INDEX 1. WARNINGS AND SAFETY HINTS.3

M37735MHBXXXFP

Abstract: ge 5216 transistor F5123
Contextual Info: MITSUBISHI MICROCOMPUTERS RY A N IMI M37735MHBXXXFP ge. ion. icat to chan ecif l sp ubject a in af es not mits ar li is is : Th metric e ic Not e para Som REL P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Serial I/O UART or clock synchronous . 3

bl p76 transistor

Abstract: bl p76 led clock circuit diagram led using clock circuit diagram with TRANSISTOR BH 4216 ic rom 2816 TD 6316 transistor bl p75 M37735MHBXXXFP
Contextual Info: MITSUBISHI MICROCOMPUTERS RY A N IMI M37735MHBXXXFP ge. ion. icat to chan ecif l sp ubject a in af es not mits ar li is is : Th metric e ic Not e para Som REL P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION ●Serial I/O UART or clock synchronous . 3

Contextual Info: s: /> -< .6 5 6 [ 1 6 . 6 5 ] -► ZONE A REVISIO NS ECN, ERN NO. DATE PRO PO SA L JUH25/06 APPRD. LCHAN ,126 [ 3 . 2 0 ] .1 2 8 [ 3 . 2 5 ] .521 [1 3 .2 2 ] > -GE 3 i— .141 [ 3 . 5 9 ] .641 [1 6 .2 7 ] MIN. .1 0 0 [ 2 . 5 4 ] — I— .0 5 0 [ 1 . 2 7 ] — | |—

F250C

Contextual Info: GE Pow er Electrolytic Capacitors 1 0 5 ° C P roduct 23J SERÍES 2 0 0 to 4 0 0 W V D C 1 5 0 to 1 1 , 0 0 0 uF HIGH TEMP ffilVERTER PRODUCT, • Broad Capacitance Range • Increased Volumetric Efficiency • Low ESR • Standard Ratings General Specifications

transistor npn 4-071

Abstract: BPW37 ic or 4071 transistor 336 cms BPW36 CQX14 GE solid state BPW3
Contextual Info: SOL I» oí ST AT E Optoelectronic Specifications Light Detector dF§3ö7SDöi aDnñia | =p s/ $s Planar Silicon Photo Transistor BPW36, BPW37 The GE Solid Slate BPW36 and BPW37 are highly sensitive NPN Planar Silicon Phototransistors. They are housed in a TO-18 style hermetically sealed package with lens cap. These devices are ideal