FD160 Search Results

Contextual Info: Bulletin PD-20533 rev. C 02/03 FD160H06A5B Fred Die in Wafer Form a 0.35 ± 0.01 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS INCHES . 2. CONTROLLING DIMENSION (INCH): d C b NOTES: (0.014 ± 0.0004) c A 40 (1.57) Wafer flat alligned with side b of the die 3. DIMENSIONS AND TOLERANCES:

0516J

Abstract: FD160H02A5B FD160H02A5P MIL-HDBK-263 S1025 UFB60FA20
Contextual Info: I - 0516J rev.B FD160H02A5B FRED Die in Wafer Form z z 200V VF = 1.08V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD1600/1200R17HP4_B2 VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A TypischeAnwendungen • Chopper-Anwendungen • Hochleistungsumrichter • Traktionsumrichter

30EPH06

Abstract: 30ETH06 S1025 FD160H06A5B
Contextual Info: Preliminary Data Sheet PD-20533 rev. A 01/01 FD160H06A5BT Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b C d NOTES: A 40 (1.57) Wafer flat alligned with side b of the die

FD160H06A5B

Abstract: S1025 Semitec 30EPH06 30ETH06
Contextual Info: Preliminary Data Sheet PD-20533 rev. B 06/01 FD160H06A5B Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b C d NOTES: A 40 (1.57) Wafer flat alligned with side b of the die

Contextual Info: PD - 20533 revE FD160H06A5B FRED Die in Wafer Form z z 600V VF = 2.6 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

FD160H06A5B

Abstract: 30EPH06 30ETH06 FD160H06A5F FD160H06A5P S1025
Contextual Info: PD - 20533 revE FD160H06A5B FRED Die in Wafer Form z z 600V VF = 2.6 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

FD1600CV

Contextual Info: 三菱半導体〈一般用整流ダイオード〉 FD1600CV-80 高圧大電力一般用 平形 FD1600CV-80 外形図 単位：mm 9 21 ± 0.5 f 60 形名 f 60 ¡IF AV 平均順電流 …………………………… 1600A ¡VRRM ピーク繰返し逆電圧 ………………… 4000V

FD160H03A5R

Abstract: 30EPH03 FD160H03A5B FD160H03A5F FD160H03A5P MIL-HDBK-263 S1025
Contextual Info: PD - 20993 rev.B FD160H03A5B FRED Die in Wafer Form z z 300V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage

FD160S04A5B

Abstract: FD160S04A5P MIL-HDBK-263 S1025 UFB60FA40
Contextual Info: I - 0525J rev.A FD160S04A5B FRED Die in Wafer Form z z 400V VF = 1.39V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage

FD1600A-60

Abstract: FD1600A
Contextual Info: 三菱半導体〈一般用整流ダイオード〉 FD1600A-60 大電力一般用 平形 FD1600A-60 外形図 単位：mm 9 21 ± 0.5 f 50 形名 f 50 ¡IF AV 平均順電流 …………………………… 1600A ¡VRRM ピーク繰返し逆電圧 ………………… 3000V

Semitec S1025

Abstract: h306 S-1025
Contextual Info: Preliminary Data Sheet PD-20533 11/00 FD160H06A5BT Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b C d NOTES: A 40 (1.57) Wafer flat alligned with side b of the die

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD1600/1200R17HP4_B2 初步数据/PreliminaryData VCES = 1700V IC nom = 1600A / ICRM = 3200A 典型应用 • 斩波应用 • 大功率变流器 • 大功率变流器 • 风力发电机 TypicalApplications

FD1600CP-10

Contextual Info: 三菱半導体〈一般用整流ダイオード〉 FD1600CP-10 低圧大電力一般用 平形 外形図 陰極 形名 ¡IF AV 平均順電流 …………………………… 1600A ¡VRRM ピーク繰返し逆電圧 ………………… 500V ¡平形

55F32

Abstract: FD1600 1200R ulw diode
Contextual Info: Technische Information / technical information FD1600/1200R17KF6C_B2 IGBT-Module IGBT-modules 1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: “ “ THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. RFD-1604-21 DESCRIPTION

672047

Abstract: b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16
Contextual Info: GE Energy Industrial Solutions 51210 GE Energy Industrial Solutions GE Industrial Solutions Industrial Solutions formerly Power Protection a division of GE Energy, is a first class European supplier of low-voltage products including wiring devices, residential and

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

FK800

Abstract: FE250 FE160 TT35 TT160 fg400
Contextual Info: GE Consumer & Industrial Power Protection Record Plus Dimensions GE imagination at work Record Plus FD & FE frame G.2 Breakers G.3 Phase separators G.3 Residual current devices RCD’s G.5 Electrical operators G.6 Rotary handles G.8 Plug-in version G.9 Drawout version

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

FT500BH

Abstract: transistor D313 FG1000AH transistor PNP A124 FD500DH FG600AH CR300FX GTO gate drive unit mitsubishi transistor pnp a111 SR252AM-40S
Contextual Info: 三菱 大電力半導体／スタック編 三菱半導体〈大電力半導体〉 品種一覧表 形 名 •一般用整流ダイオード SR60L-10S, SR60L-10R SR100L-10S, SR100L-10R SR130L-10S, SR130L-10R SR150L-10S, SR150L-10R SR170L-10S, SR170L-10R

Contextual Info: d F 75^41,51 DDD17SS S J " , 7294621 POWEREX INC T - 0/ Standard Rectifiers If( a v C Tc=1Q0° Duty Cycle, Half Sine 60 Hz (Amps) 50% for Fusing IFSM @8.3 ms (Amps x 103) 50 Hz 60 Hz (A2sec x 10*) Irrm @ Vrrm and Vfm @ Tj=25°C (mA) Vrrm Range (Volts)

A434 RF MODULE

Abstract: Pertinax thermal conductivity KEMA KEUR thermostat KEMA keur type 900 kema keur junction ip65 British standard bs 5486 part 1 856022 85-6018 Edison Screw Based LED ligh KEMA keur t 85
Contextual Info: GE Energy Industrial Solutions GE Energy Industrial Solutions GE Industrial Solutions Industrial Solutions, a division of GE Energy, is a first class global supplier of low and medium voltage products including wiring devices, residential and industrial electrical distribution components,

mccb 60947-2 max zs

Abstract: 60947-2 MAX EARTH LOOP IMPEDANCE FG400N FD63N gps1bh FD160N-FD160H 60947-2 max zs Tripping unit FK800 FE160N FD160N
Contextual Info: GE Consumer & Industrial Power Protection Record Plus Application guide GE imagination at work Record Plus E.3 Introduction E.4 Protection against short-circuit E.8 Personnel protection direct and indirect contact E.14 Selectivity/Discrimination E.20 Back-up protection