G.652 SAMSUNG Search Results

Contextual Info: SAMSUNG S E M I C ON DUCTOR INC D2 KS54HCTLS /? /¡T */ KS74HCTLS U U D E i 7Tt,414E 00DL:S73 Octal 3-State Bus Transceivers with Registers 7-", s ' a. ' 3 j Preliminary Specifications FEATURES • • • • • • • • • • DESCRIPTION . Independent Registers and Enables for A and B Buses

Contextual Info: SAMSUNG SEMICONDUCTOR INC 02 D E ^ 7TL4142 DDDbElb Octal 3 State Bus Transceivers with Registers KS54ÄHCT f ì £ Z Ì 7 f ì i Z Ò KS74AHCT 0 0 Preliminary Specifications FEATURES DESCRIPTION • • • • These devices consist of bus transceiver circuits. D-type

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MPSH17 IME O | 7*11,4142 0007302 *1 | NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (T ,= 2 5 °C )

single mode optical fiber 1550 nm

Abstract: Telcordia GR-20-CORE optical fiber cable G.652 GR-20-CORE samsung ribbon samsung ribbon vs Samsung tube tv G.652 samsung IEC793 Fiber low chromatic dispersion
Contextual Info: Samsung Electronics Fiberoptics products Single Mode Optical Fiber SAMSUNG Single Mode optical fiber is d esigned and manufactured with a matched cladding, step index profile, using Samsung’s advanced MCVD process. This design provides versatile in applications for long haul, regional and

Contextual Info: SAMSUNG SEMICONDUCTOR KS54HCTLS O Q / Ì KS74HCTLS INC GB DE§ 7^4145 Dual 4-Bit Decade Counters 7 3 /5 " “ FEATURES -2 3 DESCRIPTION • Individual clock or A and B flip-flops provide dual + 2 and + 5 counters • Direct clear for each 4-blt counter • Significant provement in system density through

SCB-0340N

Abstract: WLL6160-D99 KSB0405HA M470T2864QZ3-CF7 AR5B95 BA59-02608A M470T2864QZ3-CE6 RT8205AGQW T77H121 M470T2864EH3-CF7
Contextual Info: - This Document can not be used without Samsung's authorization - Part List : NP-N128-DA01RU Ver. Location 0001 A0010 Part Number 3903-000444 CBF-POWER CORD;DT,EU/KR,CP3,IEC320 C5,25 Part Name & Specification Q'ty SA/SNA 1 SA Parent Part 0001 A1001 BA46-11503A S/W CD;UTILITY,SPRINGFIELD,-,1.0,EXPORT,

Contextual Info: SAMSUNG ELECTRONICS 42E D INC • 7^4142 KMM540512B □ 0 1 Q 543 □ BiSflGK DRAM MODULES 512K X 40 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tR A C tC A C tR C KMM540512B- 7 70ns 80ns 20 ns 20 ns

SCB-1700N

Abstract: M470T2864QZ3-CF7 T60H928 2p2s HM160HI T60H976 HD64F2110BVTE10V 3M200MP BA42-00241A BA96-04141A
Contextual Info: - This Document can not be used without Samsung's authorization - Part List : NP-N310-KA01ZA Ver. Location 0001 NULL Part Number BA81-06952B RUBBER-HDD_BOTTOM;PEBBLE,SILICON, T0.6,W Part Name & Specification Q'ty SA/SNA 5 SA Parent Part BA75-02238A 0001

Contextual Info: KMM540512B DRAM MODULES 5 1 2 K X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C 70ns 20ns 130ns KM M 540512B- 8 80ns 20ns 150ns KM M 54051 2B-10 100ns 25ns 180ns KM M 540512B- 7 The Samsung K M M 540512B is a 5 1 2K bits X 40

6680a

Abstract: LV 20-P MC 1466 L mt 6680 ALC880 6680as samsung kbc ic hp samsung UX11 hp TPM module
Contextual Info: This Document can not be used without Samsung's authorization. 8. D C B A L R P G 46 4 P G 39 AMP CRT C R T /T V P G 32 LCD LV DS AT I M56-P P G 25 ~ 28 P G 30 ~ 31 30P P E G x16 Mobile P roc es s or Y onah - 2M 667MHz L 2 C ac he : 2 MB 478pin PSB 667 MT /S

SC454MLTRT

Abstract: BA59-01900A UJ-840 B0702 B0701 T60H928 NP-Q40 BA59-01970A SC454ML M1018
Contextual Info: - This Document can not be used without Samsung's authorization - 3.Exploded View and Part List SYSTEM I0006 T4001 T4002 T4003 M3005 T0001 T0005 I0002 M0001 B0101 G0011 B0701 G0008 W1004 I0005 E0001 G0003 B2000 B2002 R0002 W3003 T3000 B2001 T2000 T2000 T2004

CHN 652

Abstract: BA75-01763A EMC6N300 KUBNKM088A Tm61PuzG BCM4401EKFBG Tm61puz 7SZ08 NP-Q35 BA42-00163A
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung’s authorization. 6. MECHANICAL EXPLODED VIEW AND PARTLIST SYSTEM K4001 K0007 K0001 I0003 K0002 K0102 K1001 L1007 K4002

Airpax IEL

Abstract: klixon airpax Airpax cel airpax lel SW SPDT Airpax IUL bullet breaker panel
Contextual Info: IAL/IUL/IEL/LEL IAL/IUL/IEL/LEL Series Magnetic Circuit Protectors Introduction | 129 Single & Multi-Pole | 130 Rocker, Sealed Toggle | 132 Configurations | 136 Operating Characteristics | 140 Delay Curves | 141 Specifications | 145 Decision Tables | 147 IAL/IUL/IEL/LEL Series

BA59-01970A

Abstract: B0404 BA81-02243A DAC-09N014 BA59-01935A LTN141W1 SSM-8515S SSM8515s BA92-04077A KUBNKM092A
Contextual Info: - This Document can not be used without Samsung's authorization - 6. Exploded View and Part List w SYSTEM K0001 K2001 K0007 K1001 K4001 K2002 K3001 K0002 I0003 K3002 K0101 K4002 K1003 K1002 L1007 K0201 T0010 I0006 T0001 T4007 T4003 M3004 M3005 I0001 M0003

K4H561638H-UCB3

Abstract: 256mb ddr333 200 pin 66 pin tsop package DDR300 DDR333 DDR400 WV3EG6437S-D4
Contextual Info: White Electronic Designs WV3EG6437S-D4 ADVANCED* 256MB – 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED FEATURES DESCRIPTION Unbuffered Double-data-rate architecture The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR

K4H561638H-UCB3

Abstract: K4H561638 T26A
Contextual Info: White Electronic Designs WV3EG6437S-D4 ADVANCED* 256MB – 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED FEATURES DESCRIPTION Unbuffered Double-data-rate architecture The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR

intel 775 motherboard diagram

Abstract: pin diagram of intel p4 processor ICS9LP505-2 96MP2DD-24FA-4M7T lga775 prescott 800 dual core cpu 96D2-1G667NN-TR Socket 775 PIN diagram Intel Pentium 4 Socket 775 PIN diagram W83627DHG-a
Contextual Info: DVMB-764 16 CH D1 480 FPS MPEG4 Hardware Encoding ATX Main Board with Intel Q965 Platform Features NEW ƒ 16 Channel D1 480 FPS MPEG4 Hardware Encoding on board ƒ 16 Channel Audio Encoding on board ƒ Intel Q965 533/800/1066 MHz FSB ƒ Dual video stream MPEG4 ,MJPEG

T60H928

Abstract: CHN 652 BA31-00027A w18 SMD BA44-00211A BA41-00639A BA92-04077A Tm61Puz chn l35 BA68-03131A
Contextual Info: - This Document can not be used without Samsung's authorization - 6. Exploded View 1 TOP Assy1 SENS X11 < 6 - 1 > - This Document can not be used without Samsung's authorization - 6. Exploded View 2) TOP Assy2 SENS X11 < 6 - 2 > - This Document can not be used without Samsung's authorization -

2929 transistor

Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW
Contextual Info: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

DSP GROUP

Abstract: MD66 ATM machine using microcontroller HDB15 D6305B D6351A KM29N040 MDB2
Contextual Info: D6351A D S P G R O U P . I M C . F la sh Tad Chip for an all Digital Telephone Answering Device with Flash Memory and True FULL Duplex SpeakerPhone G en e r a l D es c r i ptic >n The D6351A chip is a digital speech/signal processing subsystem that implements all functions of TRUESPEECH speech

NEC Tokin cap

Abstract: NEC Tokin ultra low esr
Contextual Info: 03 Correct Use of NeoCapacitor Please Read [Notes] ● Be sure to read "Notes on Using The NeoCapacitor" (p21 - p24) and "Cautions" (p27) before commencing circuit design or using the capacitor. ● Confirm the usage conditions and rated performance of the capacitor before use.

Contextual Info: SAMSUNG ELECTRONICS INC b7E D KM49V512A/AL/ALL • 7 ^ 4 1 4 2 OOlS'iS'l 43^ I SMGK CMOS DRAM 512K x9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM49V512A/AL/ALL is a CMOS high speed 524,288 b it x 9 Dynam ic Random A ccess

DDR333

Abstract: PC2700 WV3EG216M64STSU-D4 DDR266A
Contextual Info: White Electronic Designs WV3EG216M64STSU-D4 PRELIMINARY* 256MB – 2x16Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WV3EG216M64STSU is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of

NEC Tokin cap

Abstract: lc 945 p NEC Tokin 108
Contextual Info: 03 Correct Use of NeoCapacitor Please Read [Notes] ● Be sure to read "Notes on Using The NeoCapacitor" (p21 - p24) and "Cautions" (p27) before commencing circuit design or using the capacitor. ● Confirm the usage conditions and rated performance of the capacitor before use.