FUJITSU XBAND Search Results

FMM5202ML

Abstract: mmic marking 255 MMic Marking 3 fujitsu oscillator FMM5202M mmic marking A FMM5107VD FMM5202 x-band mmic FMM5107
Contextual Info: FMM5202ML -FEATURES • • • • Single Oscillator GaAs MMIC Integrated Monolithic Oscillator Single Frequency Operation Ultra-Low Phase Noise: -90dBc/Hz Typ. Small Size 6-Pin Plastic Package for SMT Applications

Contextual Info: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|B|^Bp|B|^B P|B|^|b P|b P|B DESCRIPTION The FLX257XV chip is a pow er GaAs FET that is

FUJITSU XBAND

Abstract: FLX107MH-12 fujitsu gaas fet
Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX107M H-12 is a pow er G aAs FET that is designed for general

FUJITSU XBAND

Abstract: FLX207MH-12 fujitsu gaas fet
Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 28% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX207M H-12 is a pow er G aAs FET that is designed for general

TO 609 MH

Abstract: FLX207MH-12 14GHZ GAAS
Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general

FUJITSU XBAND

Contextual Info: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION The FLX257XV chip is a power GaAs FET that is

FLX107MH-12

Abstract: FUJITSU XBAND
Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general

FUJITSU XBAND

Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general

FLX207MH-12

Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general

FUJITSU XBAND

Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general

fujitsu gaas fet

Abstract: FLX257XV
Contextual Info: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 40 (Unit: µm) Drain Drain Drain Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is

Contextual Info: F, , FLX202MH-12 X-Ku Band Power GaAs FETs rU JII ->U FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 28% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX202M H-12 is a pow er G aAs FET that is designed for general

FUJITSU XBAND

Contextual Info: FLX252XV rUJIIoU GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLX252XV chip is a pow er GaAs FET that is designed for general purpose applications in the X-Band

FLX202MH-12

Contextual Info: F|.fjU. FLX202MH-12 J X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|dB = 32.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX202MH-12 is a power GaAs FET that is designed for general

GaAs FET HEMT Chips

Abstract: FLX257XV
Contextual Info: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is

FLX107MH-12

Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general

FLX207MH-12

Abstract: TO 609 MH
Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM