FLX207M Search Results

FLX207M Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLX207MH-12		Eudyna Devices	X, Ku Band Power GaAs FET	Original	PDF	89.68KB	4
FLX207MH-12-E1		Fujitsu	FET: P Channel: ID 1.2 A	Original	PDF	89.53KB	4

FLX207M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLX207MH-12 Abstract: MH 1051 Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general	Original	FLX207MH-12 FLX207MH-12 MH 1051	PDF
FUJITSU XBAND Abstract: FLX207MH-12 fujitsu gaas fet Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 32.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 28% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX207M H-12 is a pow er G aAs FET that is designed for general	OCR Scan	FLX207MH-12 FLX207MH-12 FCSI0598M200 FUJITSU XBAND fujitsu gaas fet	PDF
FLX207MH-12 Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general	Original	FLX207MH-12 FLX207MH-12 FCSI0598M200	PDF
FLX207MH-12 Abstract: PT 1132 Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general	Original	FLX207MH-12 FLX207MH-12 PT 1132	PDF
Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general	Original	FLX207MH-12 FLX207MH-12	PDF
TO 609 MH Abstract: FLX207MH-12 14GHZ GAAS Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general	Original	FLX207MH-12 FLX207MH-12 FCSI0598M200 TO 609 MH 14GHZ GAAS	PDF
FUJITSU XBAND Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general	Original	FLX207MH-12 FLX207MH-12 FCSI0598M200 FUJITSU XBAND	PDF
FLX207MH-12 Abstract: TO 609 MH Contextual Info: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general	Original	FLX207MH-12 FLX207MH-12 TO 609 MH	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF