FLX107M Search Results

FLX107M Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLX107MH-12		Eudyna Devices	X, Ku Band Power GaAs FET	Original	PDF	89.73KB	4
FLX107MH-12-E1		Fujitsu	FET: P Channel: ID 0.6 A	Original	PDF	89.6KB	4

FLX107M Price and Stock

Filter by Manufacturer

SUMITOMO ELECTRIC Interconnect Products


SUMITOMO ELECTRIC Interconnect Products FLX107MH-12 RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	FLX107MH-12		310			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLX107M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general	Original	FLX107MH-12 FLX107MH-12	PDF
FUJITSU XBAND Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general	Original	FLX107MH-12 FLX107MH-12 FCSI0598M200 FUJITSU XBAND	PDF
FUJITSU XBAND Abstract: FLX107MH-12 fujitsu gaas fet Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX107M H-12 is a pow er G aAs FET that is designed for general	OCR Scan	FLX107MH-12 FLX107MH-12 FCSI0598M200 FUJITSU XBAND fujitsu gaas fet	PDF
FLX107MH-12 Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general	Original	FLX107MH-12 FLX107MH-12	PDF
FLX107MH-12 Abstract: FUJITSU XBAND Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general	Original	FLX107MH-12 FLX107MH-12 FCSI0598M200 FUJITSU XBAND	PDF
Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general	Original	FLX107MH-12 FLX107MH-12	PDF
FLX107MH-12 Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general	Original	FLX107MH-12 FLX107MH-12	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF