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    FUJITSU TRANSISTOR HEMT Search Results

    FUJITSU TRANSISTOR HEMT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    FUJITSU TRANSISTOR HEMT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FHX35LG

    Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
    Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die PDF

    transistor 1345

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips
    Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips PDF

    fhc40lg

    Abstract: 18GHZ LG 932 fujitsu hemt
    Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHC40LG FH40LG 2-12GHz FCSI0598M200 fhc40lg 18GHZ LG 932 fujitsu hemt PDF

    GaAs FET HEMT Chips

    Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 GaAs FET HEMT Chips PDF

    Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200 PDF

    Low Noise HEMT

    Abstract: Super low noise figure and high associated gain
    Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHC40LG FH40LG 2-12GHz FCSI0598M200 Low Noise HEMT Super low noise figure and high associated gain PDF

    FHX13X

    Abstract: FHX13 FHX14X fujitsu hemt RF POWER TRANSISTOR C 10-12 GHZ chip
    Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		FHX13X, FHX14X 12GHz FHX13) FHX14X 2-18GHz FCSI0598M200 FHX13X FHX13 fujitsu hemt RF POWER TRANSISTOR C 10-12 GHZ chip PDF

    FHR20X

    Abstract: GaAs FET HEMT Chips 0840 057 TM 1628
    Contextual Info: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ≤ 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor


    Original     		FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200 GaAs FET HEMT Chips 0840 057 TM 1628 PDF

    high power FET transistor s-parameters

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
    Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


    Original     		FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 high power FET transistor s-parameters FHR02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip PDF

    Contextual Info: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ² 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor


    Original     		FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200 PDF

    J-2-502

    Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz FCSI0598M200 J-2-502 PDF

    fujitsu hemt

    Abstract: TM 1628 FHX45X high power FET transistor s-parameters GaAs FET HEMT Chips
    Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200 fujitsu hemt TM 1628 high power FET transistor s-parameters GaAs FET HEMT Chips PDF

    fujitsu hemt

    Abstract: FHX04 FHX04LG 4232 gm CQ 527
    Contextual Info: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg s 0.25|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    OCR Scan     		FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt FHX04 FHX04LG 4232 gm CQ 527 PDF

    FHX13LP

    Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
    Contextual Info: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    OCR Scan     		FHX13LG/LP, 14LG/LP 12GHz FHX13) 2-18GHz FCSI0598M200 FHX13LP FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt PDF

    FHR02FH

    Abstract: transistor hemt Low Noise HEMT
    Contextual Info: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for


    Original     		FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 transistor hemt Low Noise HEMT PDF

    high frequency transistor ga as fet

    Abstract: GaAs FET HEMT Chips fujitsu hemt
    Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 high frequency transistor ga as fet GaAs FET HEMT Chips fujitsu hemt PDF

    FHR02FH

    Abstract: fujitsu hemt
    Contextual Info: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for


    Original     		FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt PDF

    GaAs FET HEMT Chips

    Abstract: FHX35X high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35
    Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 GaAs FET HEMT Chips high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35 PDF

    Contextual Info: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability


    OCR Scan     		FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200 PDF

    FHX13LG

    Abstract: fujitsu hemt FHX13 FHX14LG
    Contextual Info: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FCSI0598M200 FHX13LG fujitsu hemt FHX13 PDF

    FHX35LG

    Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
    Contextual Info: FHX35LG/LP -FEATURES • • • • • Super Low Noise HEMT Low Noise Figure: 1.2B Typ. @ f=12G Hz High A ssociated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold Gate M etallization for High Reliability


    OCR Scan     		12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35 PDF

    Contextual Info: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability


    OCR Scan     		FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200 PDF

    Contextual Info: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability


    OCR Scan     		FHX13X, FHX14X FHX13) FHX14X 2-18G FCSI0598M200 PDF

    low noise hemt

    Abstract: lg s12 WG 924 FHX35LG PT 4304 a transistor fujitsu hemt
    Contextual Info: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX35LG 12GHz FHX35LG 2-18GHz FCSI0598M200 low noise hemt lg s12 WG 924 PT 4304 a transistor fujitsu hemt PDF