FUJITSU RING EMITTER Search Results

2SA1080

Abstract: 2SC2530
Contextual Info: FUJITSU SUÇON HKH S PED POWER TRANSISTORS ^ September 1979 SILICON PNP RING EMITTER TRANSISTOR RET The 2SA 1080 is a silicon PNP M.C.-Head a m p lifie r use transistor fabricated w ith F ujitsu's unique Ring E m itte r Transistor (RET) technology. RET devices are

2SC3056

Contextual Info: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor

2SC2522

Abstract: fujitsu ring emitter 2sc2523 c1507 2SA1073
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 are silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter RET

2sa 940

Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Contextual Info: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are

FT3812

Abstract: 2SC2431 2SC2432 FT3862 2SA1042 2sc2132 c 2432 FUJITSU 2SC2431
Contextual Info: FUJITSU 2SC 2431 2SC 2/132 SILICON HIGH SPEED POWER TRANSISTORS F T 3 8 1 2 (F T 3 8 6 2 ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 1 /2 S C 2 4 3 2 are silicon N P N general purpose, high p o w e r sw itching transistors fa b ric a te d w ith Fujitsu 's u n iq u e Ring E m itte r T ran sis to r (R E T ) te c h ­

2SA1073

Abstract: 2SA1072 2sc2523
Contextual Info: cP January 1990 Edition 1.1 - - - FUJITSU PRODUCT PROFILE - 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon P N P general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor RET

2SC2527

Abstract: fujitsu DC-DC a1077 NPN transistor 2527
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T

transistor ITT

Contextual Info: January 1990 Edition 1.1 FUJITSU PRO DUCT P R O FILE 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2428 is a silicon NPN general purpose, high power switching transistor fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T

TRANSISTOR 2SA1076

Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
Contextual Info: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power

2SC3058

Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran ­ sistor fabricated w ith Fujitsu's unique Ring E m itter Transistor {RET technology.

2Sa1045

Abstract: 2SC2435 2sa104
Contextual Info: 37C • 37^7L2 G001ÖL3 a FUJITSU 2SC2435 M ICROELECTRONICS 2SA1045 SILICON RING EMITTER 7 - 93- 33 DARLINGTON TRANSISTORS 10 AMP, 100 VOLT •10 absolute m a x im m ra tin g s Rating Symbol 2SC2435/2SA1045 Unit Collector to Base Voltage Emitter to Base Voltage

FT1551

Abstract: FT2551 fujitsu ring emitter
Contextual Info: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara

2SA1080

Contextual Info: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are

Contextual Info: S3E D FUJITSU LTD • 374T?5b QQDEBbü 3öb H F C A J r? Jan u ary 1992 E dition 1.0 ^ FUJITSU DATA S H E ET : MB4752A SUBSCRIBER LINE INTERFACE 1C DESCRIPTION The Fujitsu MB4752A is designad for PBX Private Branch Exchange , it has battery feed, supervision and 4-wire to 2-wire conversion functions.

2SC3844

Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Contextual Info: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg

.5J1

Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
Contextual Info: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power

fujitsu transistor

Abstract: high power switching transistor npn switching transistor 400v 2SC3057
Contextual Info: FUJITSU MICROELECTRONICS BIE D Q 374*^2 DQlfciS7S *ì BIFMI < p January 1990 Edition 1.1 r ' 3 3 ' " FUJITSU PRODUCT PROFILE - 2SC3057 Silicon High Speed Power Transistor ' DESCRIPTION The 2SC3057 is a silicon NPN planar general purpose, high power switching tran­

2SA1042

Abstract: FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432
Contextual Info: FUJITSU MI CR OEL ECT RONICS 31E » E3 3 7 4 ^ 2 GOlbSOQ b E3FMI T- 3 3 -Ì3 _ _ January 1990 ^ _ , „ - — PRODUCT PRO FILE - ' FUJITSU 2SA1041, 2SA1042, 2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high power switching

2SC3055

Abstract: E3 37497 2sc3055 transistor high power switching transistor
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*

CI L200

Abstract: 2SC3045
Contextual Info: FUJITSU MICROELECTRONICS 3?iH7fc.2 ÜDlbSMä 1 EEBFMI BIE D r - 3 2 January 1990 Edition 1,1 FUJITSU PRODUCT P RO FILE- 2SC3045 Silicon High Speed Power Transistor DESCRIPTION The 2SC3045 is a silicon N PN planar generaf purpose, high power switching tran*

2SC2530

Abstract: balast fujitsu ring emitter TRANSISTOR 2SC fujitsu transistor transistor 2SC2530 OL14 2sa fujitsu
Contextual Info: FUJITSU MIC ROELEC TRON ICS 31E D E3 374*J7b2 ÜDlbSSb 2 ES FMI January 1990 Edition 1.1 : FUJITSU P R O D U C T P R O F IL E : 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with

L81A

Abstract: 2SC2428
Contextual Info: FUJI TS U M I C R O E L E C T R O N I C S 31E D S 374*17« 001b51b T HFfll r-33'13 FUJITSU - January 1990 Edition 1.1 P R O D U C T PR O FILEZ 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 242 8 is a silicon NPN general purpose, high power switching transistor

ltsj

Abstract: 2SC2623 2SC25 2SC2522 2SC2522A fujitsu ring emitter 2sc2523 15CF
Contextual Info: FUJITSU MICROELECTRONICS 31E D B 37417b2 DDlbSlfl 3 EI F M I -r- 2 2 - 1 3 FUJITSU fS if° : PR O D UC T P R O F I L E — . * 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN general purpose, high pow er

transistor DA 3309

Abstract: lc07a 2SC2528 2SA1078 bv 3309 AC 128 pnp transistor
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 374T7L5 ÜQlt.524 =1 EBFNI cP • January 1990 Edition 1.1 »T H iT n rU J llb U PRODUCTPROFILE: - T * 2SC2528 Silicon High Speed Power Transistor_ DESCRIPTION The 2SC2528 Is a silicon NPN general purpose, medium power transistor fabricated