BALAST Search Results

ELECTRONIC BALLAST DIAGRAM 28w

Abstract: fluorescent ballasts 36w t8 36w electronic ballast electronic ballast t8 36W Ballast 2 t8 Electronic ballast 36W 136-4-UN Electronic ballast 58W EN60929 Electronic ballast 28W
Contextual Info: BALASTOS ELECTRÓNICOS PARA LÁMPARA FLUORESCENTE T8. VOLTAJE UNIVERSAL 110-260V ELECTRONIC BALLASTS FOR T8 FLUORESCENT LAMP. UNIVERSAL VOLTAGE 110-260V ESPECIALIDADES LUMINOTÉCNICAS, S.A. Información de producto / Product information L BE C * R - 13 Spa

Mallory Ignition

Contextual Info: FORM 1214M REV. J 09/03 INSTALLATION INSTRUCTIONS UNILITE DISTRIBUTOR This product is applicable to pre-1966 California and pre-1968 federally certified passenger cars. It is also applicable to non-emission controlled trucks and similar vehicles. It is not applicable or intended for use on

Contextual Info: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

cp clare reed relay

Abstract: ECG transistor replacement guide book free sip 1A05 12V 40W Fluorescent Lamp Driver circuit Diagram CP Clare Prme 15002 cp clare u prma 2a05 REED RELAY 15005 LSR2C05 CLARE REED RELAY PRMA 1a24 clare prme 15005
Contextual Info: SECTIONS CP Clare Company Overview 1 Product Selection Guide 2 Advanced Magnetic Products 3 Circuit Products 4 Reed Relay Products 5 Switch and Sensor Products 6 Surge Protection Products 7 Glossary 8 Index by Part Number 9 www.cpclare.com iii TABLE OF CONTENTS

sot23 1303

Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers

ecg replacement guide

Abstract: OSRAM t8 OSRAM led lamp osram tube osram ballast circuit 36w fluorescent lighting osram tube led OSRAM luminaire osram t8 18 Luminaire Photometric data
Contextual Info: www.osram.de SubstiTUBE – ST8-SD4 Datasheet VDE certified innovative LED-lamp, easy and safe to use in CCG installations as direct retrofit. Energy saving potential of up to 50% by replacing 36W T8 fluorescent tubes. Applicable in warehouses, supply rooms,

Contextual Info: 37E D SENELAB LTD Ö1331Ö? 0 0 0 0 2 7 3 T-39-11 SEMELAB ¡qoo £ 0 / >S//¿ g BUZ 74 MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm _10.3_ mux. A .5 m o x 1.3 -W 3.6H- J L . 2. 8 5.9 TÏ mi n. APPLICATIONS 5.1 15.8 X mÌQ ax. L J .J

acrian RF POWER TRANSISTOR

Abstract: PU 391 acrian inc
Contextual Info: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold

ASI10533

Abstract: ASI2223-20
Contextual Info: ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for high gain & efficiency telemetry applications. A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks

2SA1080

Contextual Info: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are

MOV 270/20

Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Contextual Info: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003

2sa 940

Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Contextual Info: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are

2SA1080

Abstract: 2SC2530
Contextual Info: FUJITSU SUÇON HKH S PED POWER TRANSISTORS ^ September 1979 SILICON PNP RING EMITTER TRANSISTOR RET The 2SA 1080 is a silicon PNP M.C.-Head a m p lifie r use transistor fabricated w ith F ujitsu's unique Ring E m itte r Transistor (RET) technology. RET devices are

Contextual Info: INSTALLATION INSTRUCTIONS INSTRUCCIONES DE INSTALACIÓN INSTRUCTIONS DE POSE Remove all wires connected to the + positive terminal of the original coil and connect here, to the positive (+) terminal of the Mallory coil. Do not remove or bypass the original equipment resistor for any reason (Terminal may be marked BAT).

X1311

Abstract: 59014 X4013 X4111 SMPS 265 fuse 662 610 664
Contextual Info: PTC Thermistors for overload protection, general purpose Catalogue number 2322 . . . . . . . . Int 25 °C mA It 25 °C (mA) R25 (W) Umax DC (V) Imax Dmax (A) (mm) Very low voltage types (20V) 660 53514 660 54714 661 56114 661 57014 661 59014 662 51224 662 51624

ST1803DFP

Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
Contextual Info: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D

ASI2223-20

Abstract: ASI10533
Contextual Info: ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks

Schaffner catalog

Contextual Info: Product selection chart. DC 2009 Headquarters Schaffner EMV AG 4542 Luterbach Switzerland T +41 32 681 66 26 F +41 32 681 66 41 sales@schaffner.com www.schaffner.com China Schaffner EMC Ltd. Shanghai T +86 21 6813 9855 cschina@schaffner.com Spain Schaffner EMC España

21E sot

Abstract: IC 3263 1303 SOT23
Contextual Info: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz

610 664

Contextual Info: PTC Thermistors, overload protection/general purpose Product information Dimensions Catalogue Int It R25 Vmax Imax Dmax mm number 2322 . . . . . . . . 25 °C (mA) 25 °C (mA) (Ω) (V) (A) (mm) Very low voltage types (20 V) 350 470 610 700 900 1200 1600

2SC2530

Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC2530 Silicon High Speed Power Transistor DESCRIPTION T h e 2S C 2 5 3 0 is a silicon N P N M .C .*H e ad a m p lifie r use transistor fabricated w ith Fujitus's unique Ring E m itte r Transistor R E T technology. R E T devices are

Contextual Info: Headquarters, global innovation and development center Schaffner Group Nordstrasse 11 4542 Luterbach Schweiz T +41 32 681 66 26 F +41 32 681 66 30 info@schaffner.com www.schaffner.com Sales and application centers China Schaffner EMC Ltd. Shanghai T20-3, No 565 Chuangye Road

PLACA DE ORIFICIO

Contextual Info: Ignition Module Instruction Manual Part#: 605, 609 IGNITION MODULE PN 605 and PN 609 INSTALLATION AND ELECTRICAL WIRING PROCEDURE A .0075" polyester gauge is provided to assist in setting the pickup gap. PN 605/UNILITE® MODULE: Apply a thin coat of silicone grease to the