15CF Search Results

d2s diode

Abstract: D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX078 D2S6M 60V 2A i Feature • Tj=15CfC • Tj=150°C • P r r s m P K ^ V î/ x S ü E • P rrsm 27.5 • DC/D c u y jt— ? • WM.f-hs O A tlfg • jS S .J K 27.5 I 5 I Rating Pi <»4.o •2:

marking code aaat

Abstract: AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS6 * I 60 V 1A i ÜJ Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x S ü E • P rrsm <b2.6 »2 Rating M Main Use • Switching Regulator • D C /D c u y jt— ? Unit : mm Weight 0.19« (Typ >

Contextual Info: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C

p548

Abstract: AAD-130 YEN61000-3-2
Contextual Info: AC-DCコンバータ AC-DC CONVERTER 品番 AAD-130 series Part No. 特長 FEATURES YMiniature size YHigh efficiency 83% Typical Y90-264Vac, Full range PFC Y130W with 15CFM air/80W convection cooled Y4-output：2-main and 2- sub out YUL Recognized Y小型

Contextual Info: 165 12342567839A4BC9DAE5FDB5 1 123456278 23445678197A3761 BC856DA3EF1AE871 1 E3FEF713C1AEF1EC8177A671FEA3D1 7DA31EC811DA7E81D71 • • • • 2463823478 !1"1#$%&15CF7661D7A'3671CD78 1

DIODE d3s

Abstract: MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE D3S4M 40V 3A Feature • Tj=15CfC • Tj=150°C • P r r sm P K ^ V î/ x S ü E • P rrsm Rating Main Use • Sw itching Regulator • DC/D c u y jt— ? • D C /D C Converter • W M . f - h s O A t lf g • Hom e Appliance, G am e, Office Automation

AX078

Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator

D1NS4 diode

Abstract: AX057 marking aaat ji13t
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS4 Unit : mm Weight 0.19k T yp 40 V 1A 2^ i Feature 02.6 • Tj=150°C • P rr sm Rating • Tj=15CfC • P r r s m P K ^ V î/ x (S ü E *2 -M - Main Use • • • • • DC/D c u y j t —?

Contextual Info: 165 12342567839A4BC9DAE5FDB5 1 123456278 23445678197A3761 BC856DA3EF1AE871 1 E3FEF713C1AEF1EC8177A671FEA3D1 7DA31EC811DA7E81D71 • • • • 1 8 8 8 2463823478 !1"1#$%&15CF7661D7A'3671CD78 1

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: TUSB7320, TUSB7340 USB 3.0 xHCI HOST CONTROLLER Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

2N5002

Contextual Info: TYPES 2N5002, 2N5004. 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR AN SISTO RS W IT H CO M PUTER-D ESIG NED ISO TH ER M A L G EO M ETR Y 3 3 C B -4 mC< • For Complementary Use with 2N 5003, 2N 5005, 2N 51 51, and 2N 5153

Contextual Info: TUSB7320, TUSB7340 USB 3.0 xHCI HOST CONTROLLER Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

OX36D-S-MR-R

Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
Contextual Info: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing

Contextual Info: European Space www.avx.com AVX European Space Agency and CECC Ceramic Capacitor Products Version 14.1 Table of Contents Space Level BME MLCCs – EPPL II ESA Approved ESCC 3009 . . . . . . . . 2-5 Available Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

Contextual Info: 1 5 1 9 9 9 9 12342154672894A6593B61CA3D2355 CD5 5 5CD5 5CD5 5 5 5 5 5 5 5  5 5 C D5 5 5 5 5 CD5 5 5 5 5 5 82325 6A25 C1AD55 555552215 5

Contextual Info: PowerTrench Power Clip 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 9.6 mΩ at VGS = 4.5 V, ID = 10 A dual package. The switch node has been internally connected to

Contextual Info: SGS-THOMSON * 7 m TDA8140 I* ® q 1 [L M (q M © S HORIZONTAL DEFLECTION POWER DRIVER • CONTROLLED DRIVING OF THE POWER TRANSISTOR DURING TURN ON AND OFF PHASE FOR MINIMUM POWER DISSIPA­ TION AND HIGH RELIABILITY ■ HIGH SOURCE AND SINK CURRENT CAPA­

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

120R

Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

PAS150

Contextual Info: Switch Mode Power Supply Model PAS150 H.A.L.T. TESTED 150 Watts max output power Highly Accelerated Life Testing Power Factor Correction Single Output Electrical Specifications Input Voltage: 85-132/180-264 VAC, 47-63 Hz, 1 phase Input Current: <3.2A RMS @ 115 VAC @ full load

l256mh113

Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and