15FFC Search Results

9956b

Abstract: c836 irgti140u06 diode c832 c833 *9956b 956B 4ASS452 mosfet c836
Contextual Info: International S Rectifier PD-9.956B IRGTI140U06 “HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT V CE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

C772

Contextual Info: PD-9.962B htem ational [îôr IRectifier IRGKI090U06 “CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

DIODE c802

Abstract: IRGNI115U06
Contextual Info: bitemational [ t o r Rectifier PD'"71 IRGNI115U06 “CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

X28C64

Abstract: X28C256 ucl 11 A12C UCl 21
Contextual Info: RR-511 W 0114-1 X 2 8 C 6 4 /X 2 8 C 2 5 6 RELIABILITY REPORT 10-1 INTRODUCTION The X28C64 and X28C 256 are nonvolatile bytewide E2PROM s configured as 8K x 8 and 32K x 8 respectively. Both devices are com pliant with the JEDEC approved pinout for byte-w ide m em ories.

Contextual Info: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : c 5 .8 4 M ax 5 1 o- £ -o 6 4o- -o 8 x o O •CD lTI 3. E l e c t r i c a l S p e c i f i c a t i o n s : Osi OCL: Pins 1 - 4 500uH ±25% @ 10K H z 0 .1 V 0CL: Pins 5 - 8 9 .5 0 m H ± 2 5 % <§>10KHz 0.1V

C818

Abstract: st c817 C817 st c816 C814 irgti050u06 c816
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: International l i i Rectifier PD-9.1171 IRGDDN300M12 IRGRDN300M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 300A • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated

Contextual Info: bitemational S Rectifier PM” IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce O N < 2 .5 V

d2s diode

Abstract: D2S DIODE schottky
Contextual Info: Schottky Barrier Diode Axial Diode W tm D2S4M OUTLINE Package : A X 40V 2A 078 Unit-mm Weight 0.38g Typ (D Feature • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • Tj=150°C • P r r s m Rating • D C /D C nyjt-l? • mm.cf-A.oAm • • •

Contextual Info: Schottky Barrier Diode Twin Diode Wtm D25SC6MR OUTLINE 60V 25A 1 Ü W Feature • Tj=150°C • • T j= 15 0 °C P R R S M T ’A ' i ^ V Î ' I ' K i E • * i « S • P rrsm Rating • H igh lo Rating i • 7 [Æ -J U K • Full M o ld e d Main Use

csi-2

Contextual Info: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : c 5 .8 4 M ax £ 1 o- 5 4o- -o 8 x o O •CD lTI 3. E l e c t r i c a l S p e c i f i c a t i o n s : Osi OCL: Pins 1 - 4 500uH Min @192KHz 0,1V LL: Pins 1 - 4 0.500uH Max @100KHz 0.1V sh o rt 5 - 8

2AX SMD

Contextual Info: 1. M e c h a n ic a l: 2. S c h e m a t ic : A 1 2 .7 ± 0 .4 D Q o o co -H £ 801^ 0 ^ - 9 0 MMÀA SyiAIJX tsi 3. Electrical Specifications: @25"C OCL: 4 .0 u H ± 1 0% @ 100KHz, 0.1V 0ADC 3 .5 0 Q: 2 2 3 .5 0 — Isat: - Min @10DKHz 0.1V 13.0A B a se d

40hC

Contextual Info: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : c 6.00 5 1 o- M ax £ -o 6 4o- -o 8 x o O •CD lTI 3. E l e c t r i c a l S p e c i f i c a t i o n s : Osi OCL: Pins 1 - 4 594-uH±25% @100KHz 0.1V 0CL: Pins 5 - 8 4.39m H±25% <§>100KHz 0.1V

C818

Abstract: rq20 C814 c815
Contextual Info: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

DIODE C817

Abstract: IRGTI050U06 C813 C818 C817 DIODE C813
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"

208H

Contextual Info: 2 . S ch em atic: 1. D im ensions: o- o2 .9 Ì0 .2 B 2 .5 ± 0 .2 3. E lectrical Specs: OCL: 82uH ± 5 % @ 2.52M Hz, Q: 3 0 SRF: Min @ 2.52MHz 11 MHz Min DC Res.: 1 0 .0 Max Ohms DC C u rre n t: 4 5 m A d c 1 ,0 ±0.1 1V Max Notes: 1. S old e rab llity: Leads shall m e e t MIL— STD— 202D,

1808 FOOTPRINT

Abstract: XF0246-02S
Contextual Info: 1. Dim ensions: 2. S c h e m a t i c : 0.475 Max E 0.100 0.360 Max n ñ fl ñ; X o XFMRS XF0246-02S . YYWW ta i« r•'t d 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C HYPOT: 500Vrm s y y ü u. Turns Ratio: 1:1:1:1 ±2% 0CL: 24-uH Min @100KHz 0.020V, Each Wdg

IRGKI050U06

Contextual Info: I n t e r n a t io n a l S P M 96,B Rectifier IRGKI050U06 "CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"