MFL5545 Search Results

Contextual Info: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)

Contextual Info: _ _ „ _ • international W Rectifier 4555452 G ü lb S H Üb3 ■ INR international rectifier ^se» s e rie s b4oa BACK TO BACK SCRs Power Modules 40A Features ■ G la s s p assivated junctions for greater reliability ■ Electrically isolated b a se plate 3500V RM S

Contextual Info: INTERNATIONAL RECTIFIER b5E D • MÖ55452 GD17Elb S27 M I N R PD-2.333 3o c p q o so International [?o r JRectifier 3 o c pq io o SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features 30CPQ. Units lF AV Rectangular waveform 30

Contextual Info: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32

IRFP460

Abstract: IRFP462 C558 c556 C555 C560 C557
Contextual Info: HE D | 4Û55M52 0GGÔÔÜ4 □ | Data Sheet No. PD-9.512A *r~ IN TER NAT IO NA L R E C T I F I E R INTERNATIONAL RECTIFIER Sf-s.tr IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFEFTRAIVISISTORS IRFP46S N-CHANNEL POWER MQSFETs TO-S47AC PACKAGE 500 Volt, 0.27 Ohm HEXFET

International Rectifier IRF520

Contextual Info: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

MOSFET IRF150

Abstract: IRF150 MOSFET HA711
Contextual Info: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International

2G25

Abstract: 10BB S250A DATA SHEET R38B14A
Contextual Info: ^.INTERNATIONAL RECTIFIER IO R in t e r n a t io n a l 73 D | 4Ö5S452 DDDTEfla 1 T ' ^ -2-3 Data Sheet No. PD-2.161 , r e c t if ie r R38B SERIES 1400-800 VOLTS RANGE 1670 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER VBRH.' VR " V I

IRFC9024

Abstract: CPY302F HEXFET Power MOSFET P-Channel 1000 V N-channel mosfet IRFC024 302F 60V Single N-Channel HEXFET Power MOSFET Scans-007982 HEXFET Characteristics
Contextual Info: INTERNATIONAL RECTIFIER bSE J> m 4055*452 Oülb'ÎD'l Ô7b • INR Data Sheet No. PD-5.015D International [^Rectifier HEXFET Power Module CPY302F 3-Phase Bridges Description/Features Product Summary The CPY302F HEXFET power module is intended for use in driving sub-fractional horsepower DC brushless

SMD transistor k21

Contextual Info: International US Rectifier HEXFRED PD-2.381 Provisional Data Sheet HFA40HF60 ULTRA FAST, SOFT RECOVERY DIODE Features: — Ultrafast Recovery — Ultra Soft Recovery — Very Low Ir r m — Very Low Qrr — Guaranteed Avalanche — Specified at Operating Conditions

C818

Abstract: st c817 C817 st c816 C814 irgti050u06 c816
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"

DIODE c336

Abstract: IRF952G k 3919 IRF9521 IRF9523 F9522 diode c331
Contextual Info: INTERNATIONAL R E C T I F I E R H E D | 4055455 QQdflSflE ? | Data Sheet No. PD-9.319F INTERNATIONAL RECTIFIER IO R HEXFET TRANSISTORS IRF952G IRF95S1 IRFS5SS IRFS523 Features: -100 Volt, 0.6 Ohm HEXFET T0-220AB Plastic Package T h e H E X FE T® technology is th e key to International R ectifier’s

Contextual Info: International tor Rectifier • HEXFET Power MOSFET INTERNATIONAL R E C T I F I E R • • • • • • • 4 6 5 5 4 5 2 0 0 1 4 6 4 6 650 ■ INR ru-y.yio _ IRF9530S b5E D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated

DIODE C817

Abstract: IRGTI050U06 C813 C818 C817 DIODE C813
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: International IOR Rectifier PD - 9.1693A IRL3402S PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount Optimized for 4.5V -7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 2 0 V ^ D S o n =

Contextual Info: International jag Rectifier P D - 9.1296 IRGPC60K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10|j s @ 125°C, Vge = 15V • Switching-loss rating includes all "tail" losses • Optimized lor high operating frequency over 5kHz