MAS54S2 Search Results

Contextual Info: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32

IRC530-007

Abstract: IRC530 international rectifier GTO 2A38 IRC630 IRC531 IRF531 IRC530-008 DIODE EG 83A I-10A
Contextual Info: HE D I MflSS4Sa GGDfliGM 3 | Data Sheet No. PD-9.454C T ? tz < / INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXSense —Current; Sense IRC530 C Series

IRFZ44

Abstract: IRFZ44 data IRFZ44 mosfet switching circuit gate drive for mosfet irfz44 IRFZ45 IRFz44 n-channel MOSFET c4488 IRFZ44 mosfet diode c449 diode c448
Contextual Info: H E D I 4Û554SE IN TE R N A TIO N A L ODGÖL.Tfl 4 | Data Sheet No. PD-9.510A R E C T IF IE R INTERNATIONAL RECTIFIER I«R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFZ44 IRFZ45 N-CHANNEL 60 Volt, 0.028 Ohm HEXFET TO-220AB Plastic Package

C528 DIODE

Abstract: 100A 1000V mosfet C528 transistors igbt 600V 100A short circuit mosfet 600V 100A mosfet 100a 600v DIODE 100A irgnin100m12 100A 1000V IGBT C528 ic
Contextual Info: Provisional Data Sheet PD-9.1165 bitemational râHRectifier IRGNIN100M12 "CHOPPER HIGH SIDE SWITCH" IGBTINT-A-PAK Low conduction loss IGBT High Side Switch — = 3 VCE= 1200V lc = 1 0 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"

Contextual Info: International l ü Rectifier 4055455 D G 1 5 flb 2 HEXFET P o w e r M O S F E T INTERNATIONAL G lö « IN R PD-9.563C IRL540 R EC TIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature