FUJITSU GAAS FET Search Results

HALF ADDER 74

Abstract: half adder ttl 8 bit half adder 74 mb53030 ECL NAND IMPLEMENTATION HALF ADDER Unbuffered LFP4 LDR3
Contextual Info: * * c P September 1990 Edition 2.0 FUJITSU DATA SH EET MB53xxx FURY uSeries GaAs Gate Arrays The Fujitsu FURY gate array series incorporates Fujitsu’s 0.8-micron GaAs self-aligned gate process to produce a family of devices ideally suited to the highest performance applications. Incorporating very

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

Contextual Info: FLR026FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 23.0dBm Typ. • High Gain: G-j^B = 8.0dB(Typ.) • High PAE: riadd = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR026FH chip is a power GaAs FET that is designed for

FLR016FH

Contextual Info: FLR016FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G-j^B = 8.5dB(Typ.) • High PAE: r iadd = 26%(Typ.) • Proven Reliability DESCRIPTION The FLR016FH chip is a power GaAs FET that is designed for

Fujitsu GaAs FET application note

Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Contextual Info: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was

Contextual Info: FLC161WF FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 31.8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC161WF is a power GaAs FET that is designed for general

FLC053

Abstract: FLC053WG
Contextual Info: FLC053WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC053WG is a power GaAs FET that is designed for general

Contextual Info: FLC091WF FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 28.8dBm Typ. High Gain: G ^ b = 8.5dB(Typ.) High PAE: riadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC091WF is a power GaAs FET that is designed for general

Contextual Info: F LC103 WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: r iadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC103WG is a power GaAs FET that is designed for general

Contextual Info: FLC311MG-4 FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC311MG-4 is a power GaAs FET that is designed for

Contextual Info: FLK022WG FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK022WG is a power GaAs FET that is designed for general

Fujitsu GaAs FET application note

Abstract: 0-180-degree FLL1500IU-2C Fujitsu GaAs FET Amplifier uhf microwave fet symposium amplifier advantages and disadvantages FLL15
Contextual Info: APPLICATION NOTE NUMBER 014 THE POSSIBILITIES ARE INFINITE Reprint of Technical Paper Presented at Wireless Symposium 2001 High Power GaAs FET Amplifiers: Push-Pull versus Balanced Configurations Presented by Jon Shumaker FUJITSU COMPOUND SEMICONDUCTOR, INC.

Contextual Info: F L K l 02MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general

Contextual Info: FLK202MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLK202M H-14 is a pow er GaAs FET that is designed for general

Contextual Info: FLM1414-2 co FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: riadd = 24% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

FLM5359-8C

Abstract: flm5
Contextual Info: FLM5359-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

FLM0910-4C

Contextual Info: FLM0910-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 36dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

FLM09I0-2

Contextual Info: FLM0910-2 FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

FLM1414-8C

Contextual Info: FLM1414-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 38.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: riadd = 19% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

FLM7177-8C

Contextual Info: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

FLM4450-8C

Abstract: FLM4450-4C
Contextual Info: FLM4450-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 10dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM0910-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
Contextual Info: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and

Contextual Info: FLM7785-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package