FLR026FH Search Results

Contextual Info: FLR026FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 23.0dBm Typ. • High Gain: G-j^B = 8.0dB(Typ.) • High PAE: riadd = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR026FH chip is a power GaAs FET that is designed for

FLR026FH

Abstract: fujitsu gaas fet
Contextual Info: FLR026FH fujÎt su K-Band Power GaAs FETs FEATURES • High Output Power: P-|dB = 23.0dBm Typ. • High Gain: G-j^B = 8.0dB(Typ.) • High PAE: r iadd = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR026FH chip is a power GaAs FET that is designed for

FLR026FH

Contextual Info: F LR026FH K-Bci nd P o w e r G a A s h E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C -! -, Tam Ptm m Om tip&aii Vd S 12 V vgs -4 V 1.25 w Tstg -65 to +175 °c Tch 175 op Pt V C h e m w *T w » p ^ iu rt Un» ” > cpPPipMnKt 1,;'; : Tc = 25°C

FLR024FH

Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
Contextual Info: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FLK202MH-14

Abstract: FLK052WG
Contextual Info: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH