FLK202M Search Results

FLL101ME

Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
Contextual Info: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)

Contextual Info: FLK202MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLK202M H-14 is a pow er GaAs FET that is designed for general

Contextual Info: FLK202MH14 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A)800m P(D) Max. (W)10 Maximum Operating Temp (øC) I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.

CD 8227

Abstract: FLK202 FLK202MH-14 FLK202MH14 ta 8227 k AM 128.2 PT 1132
Contextual Info: FLK 202 M H -I4 X - k u B a n d P o w e r iciA s I L i s ABSOLUTE MAXIMUM RATING (Am bient Temperature Ta=25°C . • 11 1 111 1 1 -M Mil. Ill . . . III, II III i mill I. 1,11, III.I im i.y Gate-Source Voltage 1. . . i j . . 1 m u

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

IC 4468

Contextual Info: F LK 202M H -14 f u j Tt s u X-Ku Band Power GaAs FETs FEATURES • High Output Power: P-|dB = 32.5dB m Typ. • High Gain: G ^ b = 6.0dB (Typ.) • High PAE: riadd = 27% (Typ.) • Proven Reliability • Herm etic M etal/C eram ic Package DESCRIPTION Th e F L K 2 0 2 M H -1 4 is a power G aAs F E T that is designed for general

siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Contextual Info: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of

FLK202MH-14

Abstract: FLK052WG
Contextual Info: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH