FLR016FH Search Results

FLR016FH

Contextual Info: FLR016FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G-j^B = 8.5dB(Typ.) • High PAE: r iadd = 26%(Typ.) • Proven Reliability DESCRIPTION The FLR016FH chip is a power GaAs FET that is designed for

Contextual Info: FLR016FH K - B a n d Power GaAs FE i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Condition Item Rating Unit Drain-Source Voltage vds 12 V Gate-Source Voltage vgs -4 V 1.0 w °c °c 1013! rO W B i UtSSipflwlOit Tc = 25°C Pt Storage Temperature

FLR016FH

Abstract: fujitsu gaas fet
Contextual Info: FLR016FH K-Band Power GaAs FETs FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.5dB(Typ.) N• High PAE: hadd = 26%(Typ.) O T • Proven Reliability REC OM DESCRIPTION ME FET that is designed for The FLR016FH chip is a power GaAs N

FLR024FH

Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
Contextual Info: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FLK202MH-14

Abstract: FLK052WG
Contextual Info: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH