FSF25 Search Results

Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

ic 4046

Abstract: FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R
Contextual Info: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: H a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M • Single Event W rW • ■ Package Features • 24A, 200V, rDS ON = 0.110ft Total Dose ^ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 • M TO-254AA - Meets Pre-RAD Specifications to 100K RAD (Si)

1E14

Abstract: 2E12 FSF254R4 JANSR2N7407 Rad Hard in Fairchild for MOSFET TRANSISTOR 187
Contextual Info: JANSR2N7407 Data Sheet [ /Title JANS R2N74 07 /Subject (Formerly Available As FSF25 4R4, Radiation Hardened, SEGR Resistant, N-Cha nnel Power MOSFETs) /Autho r () /Keywords (FSF2 54R4, Radiation Hardened, SEGR Resistant, N-Cha Formerly Available As FSF254R4,

Contextual Info: 09 FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS 0N = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: a h a r r is S E M I C O N D U C T O R FSF254D, FSF254R " J " m * • ■ Radiation Hardened, SE G R Resistant N-Channel Power M OSFETs june 1997 F e a tu re s Package • 18A, 250V, rDS ON = 0.170i2 • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si)

Contextual Info: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 ic 356
Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 24A, 200V, r DS 0 N = 0.11 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

fsf254

Abstract: MIL-S-19500 1E14 2E12 FSF254D FSF254R
Contextual Info: S E M I C O N D U C T O R FSF254D, FSF254R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 18A, 250V, rDS ON = 0.170Ω • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects

1E14

Abstract: 2E12 FSF254R4 JANSR2N7407
Contextual Info: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: S3 FSF250D, FSF250R June 1997 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS o N = 0.110£i TO-254AA • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event Safe Operating Area Curve for Single Event Effects

Rad hard MOSFETS in Harris

Contextual Info: JANSR2N7406 S W A« Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, Td s ON) = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

BU271

Abstract: IRF540 24334 FSN0920
Contextual Info: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A

Contextual Info: h a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M a W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS ON = 0.110£1 • Total Dose • Single Event TO-254AA - M eets Pre-RAD Specifications to 100K RAD (Si)

DATA SHEET IC 4046

Abstract: FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R
Contextual Info: S E M I C O N D U C T O R FSF250D, FSF250R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 24A, 200V, rDS ON = 0.110Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

250JIS

Contextual Info: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

FSF254D

Abstract: 1E14 2E12 FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3
Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has

Contextual Info: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7407 S em iconductor Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4636 Features • 18A, 250V, rog oi\| = 0.170Q • Total Dose The Discrete Products Operation of Harris Semiconductor

1E14

Abstract: 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3
Contextual Info: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs