FSF254D1 Search Results

Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 ic 356
Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

250JIS

Contextual Info: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

FSF254D

Abstract: 1E14 2E12 FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3
Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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