250JIS Search Results

Contextual Info: f r ^ y 7 S # G S - T H O M S O N S D 1 5 6 5 RF & MICROWAVE TRANSISTORS _ UHF PULSED APPLICATIONS • 500 WATTS @ 250jiSec PULSE WIDTH, 10% DUTY CYCLE ■ REFRACTORY GOLD METALLIZATION . EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND

SCR350

Abstract: LT 428 BP107 T8K7-35 T8K7-350
Contextual Info: m N B ΠT8K7 350A X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Phase Control SCR 350 Amperes Average 4500 Volts T8K7 350A Phase Control SCR

2N9038

Abstract: 2N5039 2N503S 2N903 2N5038 JANTX 2N5039 2N5039 JANTX JANTX 2N5038
Contextual Info: JAN, JANTX, JANTXV 2N5038 JAN, JANTX, JANTXV 2N5039 POWER TRANSISTORS 20 Amp, 150V, Double Diffused NPN Mesa FEATU RES • • • • • DESCRIPTION These M IL approved double diffused glass passivated mesa power transistors com bine fast-switching, low saturation

TU 55x

Contextual Info: G 7. SGS'THOMSON SD1563 RiilO iS lilL§ TIM!ID©i RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS 350 WATTS @ 1O^SEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250|iSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW

Integrated cd 2025 cp

Abstract: Am2055 TLX2 siemens PABX ISDN IOM S-Bus interface echo ISDN echo cancellation SR1M-2
Contextual Info: Nov : I i99lj Preliminary a Advanced Micro Devices Am2080/Am2080B S-Bus Interface Circuit SBC DISTINCTIVE CHARACTERISTICS • Full duplex 2B + D SH’-interface transceiver according to CCITT 1.430 ■ Conversion of the frame structure between the S/T and IOM interfaces

Contextual Info: RFP25N05 HARRIS S E M I C O N D U C T O R 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET July 1998 Features Description • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses fea­ ture sizes approaching those of LSI integrated circuits, gives

Contextual Info: HAFRFRIS RFP25N06, RF1S25N06, RF1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

LTRG

Contextual Info: “H Y U N D A I HYM5V64224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of four HY5V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0 1mF and

Contextual Info: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

ELE50

Abstract: ldxr
Contextual Info: STK1390 SlfTìTEK nvTIME 8K x 8 Nonvolatile Static RAM with Real Time Clock PRELIMINARY FEATURES DESCRIPTION • Solid-state nonvolatile SRAM/RTC solution no batteries required • Ideal for metering applications • 25,30,35 and 45 ns SRAM read/write access

S0151

Contextual Info: am im m R F P ro du cts M ic m s e m m 140 Commerce Drive Montgomeryviile. PA 18936-1013 Tel: {215 631-9840 i pfO§f8£s> S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W T Y P IC A L C W 15W TYPICAL PULSED GOLD METALLIZATION m

Contextual Info: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

Contextual Info: SFS9540 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175°C Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = -100V

Contextual Info: ADVANCED POWER TECHNOLOGY b3E D • QES7TOT DDD112G 637 MAVP A dvanced pow er Te c h n o l o g y APT806R5KN 800V 2.0A 6.50fl POWER MOS IV' N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT806R5KN UNIT 800

Contextual Info: ASSESS? RFP25N06, RF1S25N06, RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

VOLTAGE LEVEL RELAY SM 125 230

Contextual Info: u FSJ9160D, FSJ9160R H a r r is .«»,co.ucTo» 44A, -100V, 0.055 Ohm, Rad Harel, SEGR Resistant, P-Channel Power MOSFETs Ju ne 1 998 Features Description • 44A, -100V, rDS 0 N = 0.055£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL110D, FSL110R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june1997 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O S F E T s specifically designed for commercial and military space

SFR 252 diode

Abstract: p-channel 250V power mosfet
Contextual Info: SFR/U9224 A d v a n c e d Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A {M a x. @ VDS = -250V

BUK102-50GL

Abstract: T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE b'lE » • bbSB'lBl 003036T TSE ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monofithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general

of lcd based electronic voting machine by using 8051

Abstract: fcb61c65-70 80C52 signetics dotting word philips Power MOSFET Selection Guide of lcd based electronic voting machine by using 8051 microcontroller TCXO 10MHZ low g sensitivity TDD1742 8051 based traffic light controller an electronic voting machine using 8051
Contextual Info: Philips Components-Signetics Cellular chip set design guide RF C om m unications The Philips C om ponents-S ignetics C ellular chip set is the w orld’s first com plete chip set com m ercially available from one manufacturer. It com bines both B ipolar and CMOS

DC-101

Contextual Info: DDC101 Or, Call Customer Service at 1-800-548-6132 USA Only APPLICATIONS • DIRECT PHOTOSENSOR DIGITIZATION • DIGITAL FILTER NOISE REDUCTION: 0.9ppm, rms • PRECISION INSTRUMENTATION • DIGITAL ERROR CORRECTION: CDS • PRECISION PROCESS CONTROL • CONVERSION RATE: Up to 15kHz

Contextual Info: HUF75309T3ST S em iconductor November 1998 Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.2 Features 3A,55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: ïfA R m S HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

4558 opamp

Abstract: byb 501 SSC 9500 ic 4558 pin diagram Integrated cd 2025 cp 741 opamp CCITT1430 am2110 nt 407 f dallas 1822
Contextual Info: Nov : I i99lj Preliminary a Advanced Micro Devices Am2080/Am2080B S-Bus Interface Circuit SBC DISTINCTIVE CHARACTERISTICS • Full duplex 2B + D SH’-interface transceiver according to CCITT 1.430 ■ Conversion of the frame structure between the S/T and IOM interfaces