SD1563 Search Results

TU 55x

Contextual Info: G 7. SGS'THOMSON SD1563 RiilO iS lilL§ TIM!ID©i RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS 350 WATTS @ 1O^SEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250|iSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW

Contextual Info: f r y SG S-TH O M SO N ^ 7# SD1563 RF & MICROWAVE TRANSISTO RS _ UHF PULSED APPLICATIONS • 350 WATTS @ 1OjiSEC PULSE WIDTH, 10% DUTY CYCLE ■ 300 WATTS @ 250|J,SEC PULSE WIDTH, 10% DUTY CYCLE . 9.5 dB MIN. GAIN ■ REFRACTORY GOLD METALLIZATION

M106

Abstract: SD1563
Contextual Info: SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250µSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR

M106

Abstract: SD1563 Pulse capability
Contextual Info: SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250µSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR

Contextual Info: i, Dnc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS 350 WATTS @ lO^iSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250^SEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN

M106

Abstract: SD1563 M106 TRANSISTOR
Contextual Info: SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250µSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR

M102

Abstract: M106 sd15 M105 M119 S042 SD1474 SD1511-08
Contextual Info: SILICON POWER TRANSISTORS M KNSISTORS SGS-THIOMSON pulsed transistors are characterized for a variety of pulse widths in specific UHF frequency bands. All devices have internal impedance matching and are housed in hermetic packages. The long-term reliability

AM0608-200

Abstract: AM0608-450 M102 M106 S042 SD1563 SD1565
Contextual Info: SILICON POWER TRANSISTORS UHF PULSED TRANSISTORS SGS-THOMSON pulsed transistors are characterized for a variety of pulse widths in specific UHF frequency bands. All devices have internal impedance matching and are housed in hermetic packages. The long-term reliability provided by

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

chebyshev 3dB

Abstract: J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB
Contextual Info: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,

chebyshev 3dB

Abstract: transistor 81L AN561 SD1563 amplifier 250W
Contextual Info: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

553c

Abstract: international rectifier GTO
Contextual Info: Bulletin 12091 rev. A 10/94 International IÖ R Rectifier SD1553C.K SERIES FAST RECOVERY DIODES Hockey Puk Version Features • High power FA ST recovery diode series ■ 2.0 to 3.0 fis recovery lime ■ High voltage ratings up to 3000V 1825A 1650A ■ High current capability

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition