PD55003 Search Results

PD55003

Abstract: PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE

J-STD-020B

Abstract: PD55003L
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

transistor smd po3

Abstract: PD55003 AN1294 PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

PD55003TR

Abstract: transistor smd po3 901 704 16 08 55 AN1294 PD55003 PD55003-E PD55003S Z1033
Contextual Info: PD55003-E PD55003S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package PowerSO-10RF

PD55003

Abstract: PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

transistor smd 6z

Abstract: smd transistor 6Z SMD Transistor 9z transistor smd 4z SMD Transistor 7z smd 93 3Z 901 704 16 08 55 PD55003TR AN1294 PD55003
Contextual Info: PD55003-E PD55003S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

ST 0721

Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE

7844 transistor

Abstract: AN1294 PD55003 PD55003S 404bs smd z5
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE DESCRIPTION

J-STD-020B

Abstract: PD55003L
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

transistor smd po3

Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

BZX284C5V1

Abstract: DB-55003L-512 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD55003L PD55003L-E
Contextual Info: DB-55003L-512 Evaluation board using 1x PD55003L-E for 2-way UHF radio Features • Excellent thermal stability ■ Frequency: 410 - 512 MHz ■ Supply voltage: 12.5 V ■ Output power: > 3 W ■ Power gain: 15.8 +/-1.2 dB ■ Efficiency: 50 % - 57 % ■ Load mismatch: 20:1

PD55003L

Abstract: ST 0721 702 TRANSISTOR smd J-STD-020B PD55003L-E SMD electrolytic capacitor ferride bead
Contextual Info: PD55003L-E RF POWER TRANSISTOR The LdmoST Plastic FAMILY General features • Excellent thermal stability ■ Common source configuration ■ POUT =3W mith 17dB gain@500MHz/12.5V ■ New leadless plastic package ■ Esd protection ■ Supplied in tape & reel of 3K units

Contextual Info: PD55003-01 RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE

SO42

Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
Contextual Info: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520

512 smd resistors

Abstract: SMD DIODE 512 SMD package mark code C9 BZX284C5V1 DB-55003L-512 EEVHB1V100P EXCELDRC35C GRM426C0G102J50 GRM426C0G121J50 GRM426X7R104K50
Contextual Info: DB-55003L-512 RF POWER AMPLIFIER using 1x PD55003L-512 The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ FREQUENCY: 410 -512 MHz ■ SUPPLY VOLTAGE: 12.5V ■ OUTPUT POWER: > 3W ■ POWER GAIN: 15.8 +/-1.2dB ■ EFFICIENCY: 50% - 57% ■

transistor smd po3

Abstract: transistor po3 AN1294 PD55003 PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE DESCRIPTION

ST 0841

Abstract: ST 0721 0721 marking st 12089 MARKING code mf stmicroelectronics STMicroelectronics marking code 0721 J-STD-020B PD55003L-E PD55003LE TRANSISTOR SMD MARKING CODE 703
Contextual Info: PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 17dB gain@500 MHz/12.5 V ■ New leadless plastic package ■ ESD protection

PD55003-01

Contextual Info: PD55003-01 RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE

Contextual Info: PD55003-01 RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE

703 TRANSISTOR smd

Abstract: resitor smd
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE

DB-55003L-512

Abstract: PD55003L
Contextual Info: DB-55003L-512 schematic 1+ 2- R3 B2 C3 C4 + B1 MSub FR4 H=60 mil C5 Vcc C1 C2 D1 R2 L1 R1 C11 TL4 C8 RFin TL1 C6 C9 L2 C10 TL2 TL3 LDMOS PD55003L L3 C12 L4 C13 C7 TL5 RFout

Contextual Info: PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description PowerSO-10RF formed lead

transistor smd po3

Abstract: STMICROELECTRONICS MSL PACKAGES
Contextual Info: PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description PowerSO-10RF formed lead