FSJ9160R Search Results

2E12

Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

VOLTAGE LEVEL RELAY SM 125 230

Contextual Info: u FSJ9160D, FSJ9160R H a r r is .«»,co.ucTo» 44A, -100V, 0.055 Ohm, Rad Harel, SEGR Resistant, P-Channel Power MOSFETs Ju ne 1 998 Features Description • 44A, -100V, rDS 0 N = 0.055£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: ¡as H a rris FSJ9160D, FSJ9160R S E M I C O N D U C T O R " U W U W 'W * Radiation Hardened, S E G R Resistant P-Channel Power M O S F E T s February 1998 Features Description • 44A, -100V, r D S o N = 0.055i2 The Discrete Products Operation of Harris Semiconductor

Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rQs^oN = 0.055i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Rad Hard in Fairchild for MOSFET

Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1
Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: S E M I C O N D U C T O R FSJ9160D, FSJ9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Power MOSFET Selection Guide

Abstract: TO-205AF Package
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF

3203 MOSFET

Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
Contextual Info: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480