FS50A Search Results

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE FS50AS-03 ' 10V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 23mi2 .50A 60ns APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50ASJ-03 HIGH-SPEED SWITCHING USE FS50ASJ-03 ' 4 V D R IV E ' V d s s . .3 0 V ' rDS ON (MAX) . .19m£2 ' Id . .50A ' Integrated Fast Recovery Diode (TYP.) 60ns APPLICATION

TO-220FN

Abstract: TO220FN mosfet fs series
Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 4V DRIVE Type No. ^ 0» M FS10ASJ-03 FS10UMJ-03 FS10VSJ-Q3 FSI0KMJ-03 FS30ASJ-03 FS30UMJ-03 FS30VSJ-03 FS30KMJ-03 FS30SMJ-03 FS50ASJ-03 FS50UMJ-03 FS50VSJ-03 FS50KMJ-03 FS50SMJ-03 * FS70UMJ-03 FS70VSJ-03 FS70KMJ-03

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50ASH-03 HIGH-SPEED SWITCHING USE FS50ASH-03 OUTLINE DRAWING Dimensions in mm 6.5 5.010.2 0.510.1 1.0 Cn ? n q w e Q w r q w e r h 2.5V DRIVE q V d s s .30V

FS50A

Contextual Info: MITSUBISHI Nch POWER MOSFET ! FS50ASJ-03 | HIGH-SPEED SWITCHING USE FS50ASJ-03 • 4V D R IV E • VDSS . .30V • rDS ON (MAX) • •■• ■19mi2 .50A • Id . • Integrated Fast Recovery Diode (TYP.)

FS50ASJ-03C

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS50ASJ-03C FS50ASJ-03C MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS50ASJ-03C OUTLINE DRAWING

FS50ASJ-03F

Abstract: FS50ASJ-03F-T13 PRSS0004ZG-A
Contextual Info: FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0238-0200 Rev.2.00 Dec 19, 2008 Features • • • • • Drive Voltage : 4V VDSS : 30 V rDS ON (max) : 12.2 mΩ ID : 50 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

FS50ASJ-03F

Abstract: FS50ASJ-03F-T13
Contextual Info: FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0238-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive Voltage : 4V VDSS : 30 V rDS ON (max) : 12.2 mΩ ID : 50 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline

mosfet fs series

Contextual Info: ILOW VOLTAGE POWER MOSFET FS SERIES 2.5V DRIVE Max. ratings Typ« No. Vass (V) FS1GASH-03 FS10UMH-03 FS10VSH-03 FSI0KM H -03 FS30ASH-03 FS30UMH-03 FS30VSH-03 FS30KMH-03 FS30SMH-03 FS50ASH-03 FS50UMH-03 FS50VSH-03 FS50KMH-03 FS50SMH-03 FS70UMH-03 FS70VSH-03

Contextual Info: MITSUBISHI Nch POWER MOSFET ! FS50ASH-03 | HIGH-SPEED SWITCHING USE FS30ASH-03 OUTLINE DRAWING Dimensions in mm 6.5 5.0 X-0.2 o, ; ; IO ' —U C T — * ¿ . ; ! « i_ _ i Û.9MAX. 0 .5 ± 0.2 2 .3 ^ : 2 .2 ^ R ? P\ • 2.5V DRIVE • VDSS .30V

742 mosfet

Contextual Info: M ITSUBISHI Neh POW ER M OSFET FS50AS-03 HIGH-SPEED SW ITCHING USE FS50AS-03 • 10V DRIVE • V D S S .30V • ros ON (MAX) . 23mi2 • Id . 50A

FS50AS-03

Contextual Info: MITSUBISHI Nch POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE FS50AS-03 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 2.3 2.3 10MAX. 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r q w e wr ¡10V DRIVE ¡VDSS . 30V

FS50ASH-03

Contextual Info: MITSUBISHI Nch POWER MOSFET FS50ASH-03 HIGH-SPEED SWITCHING USE FS50ASH-03 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS . 30V

FS50ASJ-03

Contextual Info: MITSUBISHI Nch POWER MOSFET FS50ASJ-03 HIGH-SPEED SWITCHING USE FS50ASJ-03 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 2.3 2.3 10MAX. 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r q w e wr ¡4V DRIVE ¡VDSS . 30V

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

marking code H8

Abstract: FS30UMJ-06 MP-3 Package MOSFET A20 N03
Contextual Info: m u a s * Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O f t F O F /T i D â t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Max imum Ratings, Tc = 25°C Electrical Characteristics

FS30ASH03

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O C t F O fT T i D d t 3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

FS50ASJ-03

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FS50AS-03

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FS50ASJ-03F

Abstract: FS50ASJ-03F-T13 PRSS0004ZG-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid