TO220FN Search Results

127kV

Contextual Info: Schottky Barrier Diode Datasheet RB095T-60 Application Dimensions Unit : mm Structure Switching power supply Features (1) (2) (3) 1) Cathode common type. (TO-220) 6 2) Low IR 3) High reliability Construction Silicon epitaxial planar ROHM : TO220FN

Contextual Info: Schottky Barrier Diode RBQ30T45A Datasheet lDimensions Unit : mm lApplication lStructure General rectification 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 3) High reliability 5.0±0.2 1 Anode

Contextual Info: Schottky Barrier Diode Datasheet RB088T150 External dimensions Unit : mm Application Structure Switching power supply (2) 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common dual type (1) 3) High reliability

Contextual Info: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SA1635

Abstract: 2SC4008 SC-75A
Contextual Info: 2SA1635 2SC4008 Transistors Power Transistor —80V, —4A I 2SA1635 •F e a tu re s #A bsolute maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sai). (Typ. — 0 . 3 V at Ic / I b = — 2 /—0.2A) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0 W ( T c = 2 5 ‘C )

T220AB

Abstract: PRSS0003AA-A PRSS0003AA-B PRSS0004AA-A PRSS0004AB-A PRSS0004AD-A PRSS0003AB-A TO-220FN
Contextual Info: Magazine code T0-220S Magazine material Package name Renesas code Previous code PVC TO-220 PRSS0004AA-A T220AB Polyvinyl chloride TO-220F PRSS0003AA-A T220F TO-220F (2) PRSS0003AA-B T220F(2) TO-220FN PRSS0003AB-A T220FN TO-220C PRSS0004AD-A T220C TO-220S

RJK6014DPP

Abstract: RJK6014DPP-00-T2
Contextual Info: RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

RJK5012DPP

Abstract: RJK5012DPP-00-T2
Contextual Info: RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0100 Rev.1.00 May 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-03 HIGH-SPEED SWITCHING USE FS10KM-03 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 10V DRIVE V d s s .3 0V rDS ON (MAX). 95m i2

B1470

Abstract: FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ±0.2 4» • V d s s . -2 5 0 V • rDS ON (MAX) . 0.52Q

FS3KM18A

Abstract: FS3KM-18A FS3KM18 71Q1
Contextual Info: MITSUBISHI Neh POWER MOSFET FS3KM-18A HIGH-SPEED SWITCHING USE FS3KM-18A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 V d s s .900V rDS ON (MAX) .4.0Í2

78MI2

Abstract: FS10KM-06
Contextual Info: MITSUBISHI Neh POWER MOSFET F S 10K M -06 HIGH-SPEED SWITCHING USE FS10KM-06 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 10V DRIVE V d s s .60V rDS ON (M 8 m i i

FS50KMJ-3

Contextual Info: FS50KMJ-3 High-Speed Switching Use Nch Power MOS FET REJ03G1421-0300 Rev.3.00 Nov 21, 2006 Features • • • • • • Drive voltage : 4 V VDSS : 150 V rDS ON (max) : 30 mΩ ID : 50 A Integrated Fast Recovery Diode (TYP.) : 125 ns Viso : 2000 A Outline

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FS5KM-10

Abstract: mosfet 500V 5A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KM-10 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 1.1 ± 0.2 0.75 ±0.15 —O s ! \ 2 3 \ ' 2 .6 1 0.2 / 11 0.75 ±0.15 q GATE w DRAIN e SOURCE V d s s .5 0 0 V

2SK2713

Contextual Info: Transistors Switching 450V, 5A 2SK2713 • Features •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at Vgss = + 30V . 5) Easily designed drive circuits.

2SK2294

Abstract: 481J1
Contextual Info: Transistors Switching 800V, 3A 2SK2294 •F e a tu re s ^External dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at V gss = ± 3 0 V . 5 ) Easi ly designed d rive circu its.

K775

Abstract: B1470 FS20UM-5 sk 3005 FS20UM MAX240 mitsubishi marking diode ct 2405
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20UM-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING FS20UM-5 Dimensions in mm 4.5 1.3 0.5 2.6 ffi o@ © © GATE © DRAIN © SOURCE ® DRAIN • Vd s s •2 5 0 V . • rDS ON (MAX) 0 . 1 9 Í2 • I D .

FS10KM-10

Abstract: 710a
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FS50KM-2

Contextual Info: FS50KM-2 High-Speed Switching Use Nch Power MOS FET REJ03G1418-0200 Previous: MEJ02G0103-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 10 V VDSS : 100 V rDS(ON) (max) : 55 mΩ ID : 50 A Integrated Fast Recovery Diode (TYP.) : 105 ns