T220F Search Results

T220AB

Abstract: PRSS0003AA-A PRSS0003AA-B PRSS0004AA-A PRSS0004AB-A PRSS0004AD-A PRSS0003AB-A TO-220FN
Contextual Info: Magazine code T0-220S Magazine material Package name Renesas code Previous code PVC TO-220 PRSS0004AA-A T220AB Polyvinyl chloride TO-220F PRSS0003AA-A T220F TO-220F (2) PRSS0003AA-B T220F(2) TO-220FN PRSS0003AB-A T220FN TO-220C PRSS0004AD-A T220C TO-220S

TO-220FN

Contextual Info: Magazine T0220FN code Magazine PVC material Polyvinyl chloride Package name Renesas code TO-220FN PRSS0003AB-A Previous code T220FN Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box

PRSS0003AA-B

Abstract: TO-220-F2 220f SC-67
Contextual Info: RENESAS Code PRSS0003AA-B Previous Code T220F 2 MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 1.3Max 3.6 0.8 2.54 2.54 0.5 4.5 JEITA Package Code SC-67 13.5Min Package Name TO-220F(2) 2.6

TO-220FN

Abstract: T220F T220FN TO220FN PRSS0003AB-A
Contextual Info: JEITA Package Code ⎯ RENESAS Code PRSS0003AB-A Previous Code T220FN MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Package Name

A42 B331

Abstract: CA91C860B-40IQ CA91C860B-40CQ CA91C860B-50CQ tea 1601 t CA91C860B a44 b331 CA91C860 T337A CA91L860B-50CE
Contextual Info: QSpan CA91C860B, CA91L860B PCI to Motorola Processor Bridge Manual http://www.tundra.com The information in this document is subject to change without notice and should not be construed as a commitment by Tundra Semiconductor Corporation. While reasonable precautions have been taken, Tundra

a8b00

Abstract: bcr5pm14l T220F
Contextual Info: Preliminary Datasheet BCR5PM-14LJ 700V - 5A - Triac R07DS0950EJ0100 Rev.1.00 Nov 19, 2012 Medium Power Use Features •        IT RMS : 5 A VDRM: 800 V (Tj =125°C) Tj: 150°C IFGTI, IRGTI, IRGT III: 30 mA Viso: 2000 V Insulated Type

87c60

Contextual Info: Preliminary Datasheet BCR16PM-14LJ 700V - 16A - Triac R07DS0958EJ0100 Rev.1.00 Dec 03, 2012 Medium Power Use Features •        IT RMS : 16 A VDRM : 800 V (Tj =125 °C) Tj: 150 °C IFGTI, IRGTI, IRGT: 30 mA Viso: 2000 V Insulated Type

BCR12PM

Contextual Info: Preliminary Datasheet BCR12PM-12LC R07DS1242EJ0400 Previous: REJ03G1261-0300 Rev.4.00 Dec 24, 2014 600V – 12A - Triac Medium Power Use Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type

Contextual Info: Preliminary Datasheet BCR12PM-12LD R07DS0973EJ0001 Rev.0.01 Nov 28, 2012 600V - 12A - Triac Medium Power Use Features •        IT RMS : 12 A VDRM: 600 V IFGTI, IRGTI, IRGT: 50 mA Viso: 2000 V Tj: 150 °C Insulated Type Planar Passivation Type

2T312A

Abstract: CA91C860B t413c QSpan t009 t418 T415I ad t004 t313d AD T006
Contextual Info: QSpan II User Manual 8091862_MA001_08 November 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER

Contextual Info: Preliminary Datasheet RJK6014DPP R07DS0244EJ0200 Previous: REJ03G1531-0100 Rev.2.00 Jan 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current

Contextual Info: Preliminary Datasheet RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0200 Rev.2.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN

Contextual Info: Preliminary Datasheet BCR12PM-12LD R07DS0973EJ0100 Rev.1.00 Dec 20, 2012 600V - 12A - Triac Medium Power Use Features •        IT RMS : 12 A VDRM: 600 V IFGTI, IRGTI, IRGT: 50 mA Viso: 2000 V Tj: 150 °C Insulated Type Planar Passivation Type

Contextual Info: Preliminary Datasheet BCR2PM-12RE R07DS1239EJ0200 Previous: REJ03G1468-0100 Rev.2.00 Dec 24, 2014 600V - 2A - Triac Low Power Use Features • Insulated Type • Planar Passivation Type • The product guaranteed maximum junction temperature 150°C. • IT (RMS) : 2 A

VA330

Abstract: BCR10PM-14L
Contextual Info: Preliminary Datasheet BCR10PM-14LJ R07DS0980EJ0100 Rev.1.00 Dec 03, 2012 700V - 10A - Triac Medium Power Use Features •        IT RMS : 10 A VDRM : 800 V (Tj = 125 °C) Tj: 150 °C IFGTI, IRGTI, IRGT: 30 mA Viso: 2000V Insulated Type

Contextual Info: Preliminary Datasheet BCR25PM-14LJ R07DS1224EJ0100 Rev.1.00 Jul 28, 2014 700V - 25A - Triac Medium Power Use Features • • • • • • • • IT RMS : 25 A VDRM : 800 V (Tj=125°C) Tj: 150 °C IFGTI, IRGTI, IRGT III : 50 mA Insulated Type Planar Passivation Type

Contextual Info: Preliminary Datasheet BCR16PR-12LB R07DS0974EJ0001 Rev.0.01 Nov 28, 2012 600V - 16A - Triac Medium Power Use Features •        IT RMS : 16 A VDRM : 600 V IFGTI, IRGTI, IRGT: 30 mA (20 mA) Note4 Viso: 2000 V Insulated Type

BD6061GUT

Abstract: BD6063HFN BD6071HFN BD6072HFN
Contextual Info: T E C H N IC A L N O T E LED Driver Series for Compact LCD Backlight Pb RoHS -~Free Chopper Type White LED Drivers With Synchronous Rectification R0M1 E h M e C a w t t Oktettv* BD6061GUT, BD6063HFN, BD6071HFN, BD6072HFN •Description The BD6061GUT/BD6063HFN/BD6072HFN are white LED driver ICs with synchronous rectification that can drive 4

JEITA SC-67

Contextual Info: Preliminary Datasheet BCR20PM-14LJ R07DS0982EJ0100 Rev.1.00 Dec 03, 2012 700V - 20A - Triac Medium Power Use Features •        IT RMS : 20 A VDRM : 800 V (Tj = 125 °C) Tj: 150 °C IFGTI, IRGTI, IRGT: 30 mA Viso: 2000 V Insulated Type

qspan top mark

Abstract: TIP177 CA91L862A-50IE t415i
Contextual Info: QSpan II CA91L862A PCI to Motorola Processor Bridge Manual www.tundra.com The information in this document is subject to change without notice and should not be construed as a commitment by Tundra Semiconductor Corporation. While reasonable precautions have been taken, Tundra Semiconductor Corporation assumes no

Contextual Info: Preliminary Datasheet RJK6014DPP R07DS0244EJ0200 Previous: REJ03G1531-0100 Rev.2.00 Jan 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current

3p transistor

Abstract: T920 PRSS0003AA-A PRSS0003AA-B PRSS0003EA-A PRSS0004AA-A PRSS0004ZB-A T220AB T220F
Contextual Info: BOX code SCR01 Package name BOX Maximum storage No. Packing form Transistor/Inner box Renesas code Previous code TO-3P* PRSS0004ZB-A T3PO 200 Non dry pack TO-92* PRSS0003EA-A T920 3000 Non dry pack TO-220 PRSS0004AA-A T220AB 500 Non dry pack TO-220F PRSS0003AA-A

RJK5012DPP

Abstract: RJK5012DPP-00-T2 T220FN
Contextual Info: Preliminary Datasheet RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0200 Rev.2.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN

CA91C860B

Abstract: nokia n8 Tundra QSpan CA91L862A-40CE nokia 1110 CA91L862A-50IE nokia c5 03 CA91L862A-50CE QSpan t009
Contextual Info: QSpan II CA91L862A PCI-to-Motorola Processor Bridge Manual www.tundra.com The information in this document is subject to change without notice and should not be construed as a commitment by Tundra Semiconductor Corporation. While reasonable precautions have been taken, Tundra Semiconductor Corporation assumes no