T220AB Search Results

T220AB

Abstract: PRSS0003AA-A PRSS0003AA-B PRSS0004AA-A PRSS0004AB-A PRSS0004AD-A PRSS0003AB-A TO-220FN
Contextual Info: Magazine code T0-220S Magazine material Package name Renesas code Previous code PVC TO-220 PRSS0004AA-A T220AB Polyvinyl chloride TO-220F PRSS0003AA-A T220F TO-220F (2) PRSS0003AA-B T220F(2) TO-220FN PRSS0003AB-A T220FN TO-220C PRSS0004AD-A T220C TO-220S

T220AB

Abstract: T-220AB SC-46 JEITA PRSS0004AA-A
Contextual Info: JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code T220AB MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 16Max 7.0 3.2 1.3 φ3.6 3.8Max 1.0 0.8 2.54 0.5 2.54 4.5Max 12.5Min Package Name TO-220 2.6

3p transistor

Abstract: T920 PRSS0003AA-A PRSS0003AA-B PRSS0003EA-A PRSS0004AA-A PRSS0004ZB-A T220AB T220F
Contextual Info: BOX code SCR01 Package name BOX Maximum storage No. Packing form Transistor/Inner box Renesas code Previous code TO-3P* PRSS0004ZB-A T3PO 200 Non dry pack TO-92* PRSS0003EA-A T920 3000 Non dry pack TO-220 PRSS0004AA-A T220AB 500 Non dry pack TO-220F PRSS0003AA-A

Triac T435

Abstract: T220AB T410 ISOWATT weight sot194 Triac T435 80 T435 70 T435 Triac 3a 600v SOT-194
Contextual Info: T410 T435 HIGH PERFORMANCE TRIACS . . FEATURES ITRMS = 4 A VDRM = 400 V to 800 V SENSITIVE GATE : IGT ≤ 10 mA HIGH COMMUTATION : dI/dt c > 3.5 A/ms A1 A2 G A1 A2 DESCRIPTION The T410 / T435 high voltage TRIAC Families are high performance planar diffused PNPN devices glass passivated technology.

PRSS0004AA-A

Abstract: T220AB
Contextual Info: Preliminary Datasheet CR12CM-12B Thyristor R07DS0232EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features • IT AV : 12 A  VDRM : 600 V  IGT : 30 mA  The product guaranteed maximum junction temperature of 150°C  Non-Insulated Type  Planar Passivation Type

Contextual Info: V30M120CxM3, VI30M120CxM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: Preliminary Datasheet BCR12CM-16LB R07DS0976EJ0100 Rev.1.00 Nov 28, 2012 800V - 12A - Triac Medium Power Use Features • IT RMS : 12 A  VDRM : 800 V  IFGTI, IRGTI, IRGT III : 30 mA  The Product guaranteed maximum junction temperature 150C  Non-Insulated Type

Contextual Info: Preliminary Datasheet CR8CM-12B Thyristor R07DS0231EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT AV : 8 A  VDRM : 600 V  IGT : 15 mA Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220)

PRSS0004AA-A

Abstract: T220AB
Contextual Info: Preliminary Datasheet CR6CM-12B Thyristor R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT AV : 6 A  VDRM : 600 V  IGT : 10 mA Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220)

Contextual Info: Preliminary Datasheet CR6CM-12B Thyristor R07DS0230EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features • Non-Insulated Type  Planar Passivation Type  IT AV : 6 A  VDRM : 600 V  IGT : 10 mA Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220)

Contextual Info: Preliminary Datasheet CR12CM-12B Thyristor R07DS0232EJ0100 Rev.1.00 Dec 20, 2010 Medium Power Use Features • IT AV : 12 A  VDRM : 600 V  IGT : 30 mA  The product guaranteed maximum junction temperature of 150°C  Non-Insulated Type  Planar Passivation Type

2SK3679

Abstract: 2sk3598 2SK3599-01MR 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse RDS (on) PD ＊2 Max. ＊1

T220AB

Abstract: BYT71 ISOWATT220AC TO-220 Isowat
Contextual Info: BYT71 F -800  FAST RECOVERY RECTIFIER DIODES . . FEATURES HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY INSULATED PACKAGE : insulating voltage = 2000VDC capacitance = 12 pF K A K A DESCRIPTION Single chip rectifier suited for power conversion and polarity protection applications.

HA 12058

Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Contextual Info: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION