RJK5012DPP Search Results

RJK5012DPP

Abstract: RJK5012DPP-00-T2
Contextual Info: RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0100 Rev.1.00 May 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

RJK5012DPP-E0

Contextual Info: Preliminary Datasheet RJK5012DPP-E0 500V - 12A - MOS FET High Speed Power Switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012 Features • Low on-resistance RDS on = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

Contextual Info: Preliminary Datasheet RJK5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0421EJ0100 Rev.1.00 May 31, 2011 Features • Low on-resistance RDS on = 0.515 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

Contextual Info: Preliminary Datasheet RJK5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0421EJ0100 Rev.1.00 May 31, 2011 Features • Low on-resistance RDS on = 0.515 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

Contextual Info: Preliminary Datasheet RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0200 Rev.2.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN

RJK5012DPP-E0

Contextual Info: Preliminary Datasheet RJK5012DPP-E0 500V - 12A - MOS FET High Speed Power Switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012 Features • Low on-resistance RDS on = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

RJK5012DPP

Abstract: RJK5012DPP-00-T2 T220FN
Contextual Info: Preliminary Datasheet RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0200 Rev.2.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

GRM21BR11H104KA01L

Abstract: LC-2-G R719 nec 501 t ML-800-S1V-2P CN701 EZ 707 DSP02-002-431G EZ-0008 GP1UX511QS
Contextual Info: ユーザーズ・マニュアル 78K0/IB2 蛍光灯 Ballast 評価ボード 対象デバイス 78K0/IB2 マイクロコントローラ ZBB-CE-09-0011 Data Published March 2009 NEC Electronics Corporation 1/27 本資料に記載されている内容は2009年3月現在のもので，今後，予告なく変更することがありま す。

cn701

Abstract: ic501 R719 ic401 VR401 5R107 ZD701 IC772 r707 Q708
Contextual Info: Power Supply C704 1000P C705 LF1 LF2 1000P SS24H SU10VD NTC0 NTPAJ100LDKB0 D702 D1N60 MOV0 ERZV09D511 +5V R402 33K R403 33K TP1 C723 1 1 2 2 C301 22u R302 330 R304 4.7 1 PC302 +5V PS2561AL-1 4 2 +5V R306 3 C601 0.1u R307 10K C602 1u R303 3.3K R705 10 2W TP26

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

dali master schematic

Abstract: DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual
Contextual Info: Application Note Controlling Fluorescent Lamp Ballasts by Using 78K0/Ix2 This application note describes how to control fluorescent lamp ballasts by using the various features of the 78K0/Ix2 microcontroller. Details about power factor correction PFC controlled by using a PWM timer that operates in

panasonic inverter 707 manual

Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
Contextual Info: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change

rjh60f5

Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.

R2J24020F

Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
Contextual Info: 2009.07 ルネサス 電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体 の炭素使用量を減らし地球の温暖化を防ぐことができます。 電気は主に発電所で作られ、高電圧のACで送電されること

mip0221

Abstract: hioki 3216 HIOKI 3332 GP1UX511QS qe R725 GRM21BR11H104KA01L ic401 CN701 Q708 QE r517
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

dali master schematic

Abstract: dali schematic diode 702 TRANSISTOR 707 ceramic capacitor 102 DSP02-002-431G GRM21BR11H104KA01L traffic light using 68K GP1UX511QS p120 photocoupler
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid