FS100U Search Results

fs100umh-03

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100UMH-03 HIGH-SPEED SWITCHING USE FS100UMH-03 OUTLINE DRAWING Dimensions in mm • 2.5V DRIVE • V d s s . • TDS ON (MAX) .

FS100UMJ-03F

Abstract: FS100UMJ-03F-A8
Contextual Info: FS100UMJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0249-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : 30 V rDS ON (max) : 4.0 mΩ ID : 100 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns

FS100UMJ-03

Contextual Info: MITSUBISHI Nch POWER MOSFET FS100UMJ-03 HIGH-SPEED SWITCHING USE FS100UMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. D 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. f 3.6 q w e wr ¡4V DRIVE ¡VDSS . 30V

Contextual Info: MITSUBISHI Nch POWER MOSFET FS100UMH-03 HIGH-SPEED SWITCHING USE FS100UMH-03 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. D 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. f 3.6 q w e wr ¡2.5V DRIVE ¡VDSS . 30V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100UMH-03 HIGH-SPEED SWITCHING USE FS100UMH-03 OUTLINE DRAWING Dimensions in mm ♦ LU U LU qwe 2.5V DRIVE q V d s s . 3 0 V w D R A IN e SOURCE r D R A IN

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100UM-03 HIGH-SPEED SWITCHING USE FS100UM-03 OUTLINE DRAWING Dimensions in mm 4.5 1.3 ILI U LU qw e Q i q w e r 10V DRIVE V d s s .3 0 V q o -

P channel MOSFET 50A

Contextual Info: MITSUBISHI Neh POWER MOSFET ! FS100UM-03 I f HIGH-SPEED SWITCHING USE j FS100UM-03 • 10V DRIVE • VDSS .30V • rDS ON (MAX) . 5 .4 m Q

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100UMJ-03 HIGH-SPEED SWITCHING USE FS100UMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 1.3 * * LU U LU qwe 0 ' 4V DRIVE V d s s . 3 0 V q w e r q o- rDS ON (MAX). A.7mLl

FS100UM-03

Contextual Info: MITSUBISHI Nch POWER MOSFET FS100UM-03 HIGH-SPEED SWITCHING USE FS100UM-03 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. D 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. f 3.6 q w e wr ¡10V DRIVE ¡VDSS . 30V

HCO2

Abstract: 101CC
Contextual Info: MITSUBISHI Neh POW ER M OSFET FS100UMJ-03 HIGH-SPEED SWITCHING USE FS100UMJ-03 | *4 V DRIVE | • V d s s .30V [ • rDS ON (MAX) . 4 .7 m Q

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

TO-220FN

Abstract: TO220FN mosfet fs series
Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 4V DRIVE Type No. ^ 0» M FS10ASJ-03 FS10UMJ-03 FS10VSJ-Q3 FSI0KMJ-03 FS30ASJ-03 FS30UMJ-03 FS30VSJ-03 FS30KMJ-03 FS30SMJ-03 FS50ASJ-03 FS50UMJ-03 FS50VSJ-03 FS50KMJ-03 FS50SMJ-03 * FS70UMJ-03 FS70VSJ-03 FS70KMJ-03

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

FS30ASH03

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O C t F O fT T i D d t 3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

Contextual Info: mMBŒK S h o rt FOTITI Ddtd Powerex, Inc., 200 Hiltis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 10.0V Driver Voltage n-channel MOSFETs M axim um Ratings, Tc = 25°C Device V q ss *D Pd

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

FS100UMJ-03F

Abstract: FS100UMJ-03F-A8
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device V DSS •d Pd Number Electrical Characteristics

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

mosfet fs series

Contextual Info: ILOW VOLTAGE POWER MOSFET FS SERIES 2.5V DRIVE Max. ratings Typ« No. Vass (V) FS1GASH-03 FS10UMH-03 FS10VSH-03 FSI0KM H -03 FS30ASH-03 FS30UMH-03 FS30VSH-03 FS30KMH-03 FS30SMH-03 FS50ASH-03 FS50UMH-03 FS50VSH-03 FS50KMH-03 FS50SMH-03 FS70UMH-03 FS70VSH-03

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

FS10AS-03

Abstract: sot 23 076H FS10SM06 FS50SM03 FS10KM-03 FS10UM-03 FS50SM-03 FS5KM-06 FS5UM-06 FS50KM-06
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o rt F o rm D s ts Selector Guide Discrete MOSFET - Low Voltage Trench Gate 10.0V Driver Voltage n-channel MOSFETs Max im um Ratings T c = 25°C Electrical C haracteristics