FRS2 Search Results

1E14

Abstract: 2E12 FRS244D FRS244H FRS244R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS244D, FRS244R, FRS244H 9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 250V, RDS on = 0.415Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

1E14

Abstract: 2E12 FRS234D FRS234H FRS234R
Contextual Info: FRS234D, FRS234R, FRS234H 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 250V, RDS on = 0.715Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: DIODE MODULE f .r .d. FRS20QAA40/60 UL;E76102(M ) F R S 2 0 0 A A is a high speed isolated diode module designed for high power switching application. F R S 2 0 0 A A is suitable for high frequency application requiring low loss and high speed control. 93.5MAX

Contextual Info: DIODE MODULE F.R.D. FRS200BA F R S 2 0 0 B A is a high speed isolated diode module designed for high power switching application. F R S 2 0 0 B A is suitable for high frequency application requiring low loss and high speed control. • High Speed t r r ^ 100ns

Contextual Info: FRS22012 SLR3 series miniature latching, 1.5A,3.5kV TM Bistable Latching relay 1.5A Carry current up to 30MHz 3.5kV DC Isolation 0.5ms Coil pulse length version CONTACT Latching RF relay designs for manpack, portable HF radio systems, from 1-30MHz, where power resources are limited

1E14

Abstract: 2E12 FRS230D FRS230H FRS230R
Contextual Info: FRS230D, FRS230R, FRS230H 7A, 200V, 0.515 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 200V, RDS on = 0.515Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

marking code G1

Abstract: G7 marking Code FRS2A marking G3 FRS2J
Contextual Info: FRS2A . FRS2M 1.5 Amp. Surface Mounted Glass Passivated Fast Recovery Rectifier Dimensions in mm. CASE: SMB/DO-214AA Voltage 50 to 1000 V Current 1.5 A 5.1 ± 0.3 1.25 ± 0.25 • Glass passivated junction • High current capability • The plastic material carries U/L 94 V-0

Contextual Info: h a r ^ s S E M I C O N D U C T O R 2N7288D, 2N7288R 2I^72ÔÔH REGISTRATION PENDING Available as FRS244 D, R, H November 1994 . R a d iatio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s Features Package

case SMB

Abstract: MARKING G6
Contextual Info: FAGOR^ FRS2A FRS2M 1.5 Amp. Surface Mounting East Recovery Dimensions in mm. CASE: SMB/DO-214AA Voltage SO to 1.000 V Current 1.5 A • Glass passivated junction • High current capability • The plastic material carries U/L 94 V-0 • Low profile p ackag e

Contextual Info: FRS240D3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: FRS244H1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: FRS230R4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)7 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)

Contextual Info: FRS234R2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)

Contextual Info: HARRIS SEniCOND SECTOR Sfl E HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS230 D, R, H D • 4 3 D2 E 7 1 DDMSbf l T *432 « H A S 2N7276D, 2N7276R 2N7276H December 1992 Radiation Hardened N-Channel Power MOSFETs Package

Contextual Info: RECTRON SEMICONDUCTOR FRS201L TECHNICAL SPECIFICATION FRS207L THRU FAST RECOVERY BRIDGE RECTIFIER FEATURES • • • • Fast switching Surge overload rating: 50A peak Ideal for PCB mounting Weight: 2.74 grams MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS

Contextual Info: if^ S S FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255£i TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

FRS200CA120

Abstract: Fast Recovery PH 21 DIODE FRS200CA100 reverse recovery
Contextual Info: DIODE MODULE（F.R.D.） FRS200CA100/120 UL;E76102 （M） FRS200CA is a high speed（fast recovery）isolated diode module designed for high power switching application. FRS200CA is suitable for high frequency application requiring low loss and high speed control.

SLR305

Contextual Info: FRS22000 series, SLR3 series TM TM miniature latching, 3.5 kV, 1.5A A latching RF reed relay designed for manpack, portable HF radio systems, from 1-30MHz, where power resources are limited and board space is at a premium. These relays have separate set and reset coils to simplify board

welding inverter 200A

Abstract: FRS200BA A3300
Contextual Info: DIODE MODULE F.R.D. FRS200BA50/60 UL;E76102 M FRS200BA is a high speed isolated diode module designed for high power switching application. FRS200BA is suitable for high frequency application requiring low loss and high speed control. High Speed trr 100ns

Contextual Info: I 1/ V R R I 15 FRS230D, FRS230R, S E M I C O N D U C T O R 7A, 200V, 0.515 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 200V, RDS on = 0.515£2 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma

welding inverter 200A

Abstract: power diode 200A 200A inverter welding inverter FRS200CA100 FRS200CA120 inverter welding
Contextual Info: DIODE MODULE F.R.D. FRS200CA100/120 UL;E76102 M FRS200CA is a high speed isolated diode module designed for high power switching application. FRS200CA is suitable for high frequency application requiring low loss and high speed control. High Speed trr 350ns

B92 02 diode

Abstract: B91 02 diode b92 diode DIODE B91 FRS200AA FRS200AA60 SANSHA FRS200AA40 H150 B91 diode
Contextual Info: 7^12143 0G0G475 412 « S E M J SANSMA ELECTRIC MFG CO SbE D DIODE MODULE f .R . d . FRS200AA40/60 F R S 2 0 0 A A is a high speed isolated diode module designed for high power switching application. F R S 2 0 0 A A is suitable for high frequency application requiring low loss and high speed control.

Contextual Info: FRS244R1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: FRS240H4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)