FPD1 Search Results

Rogers-4003

Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
Contextual Info: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

FPD1500SOT89

Contextual Info: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

FPD1500SOT89

Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
Contextual Info: FPD1500SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant

SSG 23 TRANSISTOR

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)

FPD1500

Abstract: MIL-HDBK-263 PAD130
Contextual Info: FPD1500 1W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an

FPD1500

Abstract: MIL-HDBK-263 P100
Contextual Info: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND

transistor SMD P1f

Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
Contextual Info: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

FPD13R12JY

Contextual Info: GERMANIUM AVALANCHE PHOTODIODE FPD13R12JY DESCRIPTION The FPD13R12JY is a germanium avalanche photodiode APD w ith a m ultim ode fiber pigrail designed fo r use in a local area network and sub­ scriber loop applications. It is also applicable in a high-bit-rate optical

avalanche photodiode 1550nm sensitivity

Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC
Contextual Info: InGaAs AVALANCHE PHOTODIODE FPD15W51RT DESCRIPTION The FPD15W51RT is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD mounted on a low parasitic ceramic carrier designed for use in optical transmission systems operating at a giga-bit-rate,

transistor SMD P2F

Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
Contextual Info: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

FPD1500SOT89CESR

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500SOT89E

Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

eb105

Abstract: FPD1050SOT89 VG sma
Contextual Info: EB1050SOT89BB FPD1050SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 900MHz 23.0dBm Output Power 22dB Gain 0.6dB Noise Figure 33.5dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS

FPD1500SOT89

Contextual Info: Balanced EBD1500SOT89-AG FPD1500SOT89 2.5 - 2.6GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.5 2.6 30.5 30.2 14.8 14.5 0.95 0.95 43.5 43.5 5V, 150mA DESCRIPTION AND APPLICATIONS The data given above is based on measurements taken on the evaluation board described

FPD1500

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35
Contextual Info: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

FPD1500SOT89CE

Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Contextual Info: FPD1050 Datasheet v2.2 0.75W POWER PHEMT FEATURES: • • • • • LAYOUT: 28.5 dBm Linear O/p Power at 12 GHz 11 dB Power Gain at 12 GHz 14 dB Maximum Stable Gain at 12 GHz 41 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1050

Transistor AC 51 0865 75 834

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

FPD13R51JY

Abstract: low dark current APD
Contextual Info: DESCRIPTION The FPD13R51JY is a germanium avalanche photodiode APD with a multimode fiber pigtail designed for use in a local area network and a subscriber loop application. It is also applicable in a high-bit-rate optical transmission system. The APD chip has a photosensitive area diameter of 50jum and has a

40G APD chip

Abstract: Photodiode apd high sensitivity
Contextual Info: InGaAs AVALANCHE PHOTODIODE FPD13W51JW DESCRIPTION The FPD13W51JW is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD w ith a m ultim ode fiber pigtail designed fo r use in optical transmission systems operating at a giga-bit-rate, especially at

FPD13R51KS

Contextual Info: DESCRIPTION The FPD13R51KS is a Germanium Avalanche Photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at high-bit-rates and over long distances. The 50Mm photosensitive diameter is optimized to achieve both higher

FPD15U51JT

Abstract: InGaAs Photodiode 1550nm 1550NM APD "PhotoDiode" 1550nm avalanche 1550nm photodiode 5 Ghz
Contextual Info: FPD15U51JT a v a la n c h e ph o to m o d e DESCRIPTION The FPD15U51JT is an InGaAs avalanche photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at a high-bit-rate and a long distance. The APD chip has a photosensitive