FOR TRANSISTOR TT 2222 Search Results

smd code HF transistor

Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
Contextual Info: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor tt 2222

Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
Contextual Info: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power

Contextual Info: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for

timer 555 dil8

Abstract: ZSCT1555 astable Multivibrator 74
Contextual Info: PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery

APPLICATIONS OF astable multivibrator

Contextual Info: OBSOLETE No Recommended Replacements PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery

Contextual Info: PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery

transistor tt 2222

Abstract: smd 809 x transistor transistor SMD S33
Contextual Info: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures

transistor tt 2222

Abstract: transistor tt 2222 vertical TT 2222 Philips 2222 capacitor for transistor tt 2222 philips Trimmer 60 pf SOT123 Package 2322 151 51005 sot123 trimmer PT 10
Contextual Info: Philips S em iconductors m b b S B 'Ì B l Q 0 S CJ,Ì D C1 4 T 2 BBA PX Product specification VHF power MOS transistor — BLF225 • N AfIER PHILIPS/DISCRETE FEATURES b'ìE D PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.

transistor tt 2222

Abstract: transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341
Contextual Info: Philips Semiconductors 1^53^31 4G5 IAPX HF/VHF power MOS transistor Product specification BLF241 N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures

BLW40

Abstract: MCD205 TLO 721
Contextual Info: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification

sot172

Contextual Info: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> b b s a ^ l □□2883'! 3bl I IAPX BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE b b S B 'm » DD2flfl7b E3^ BLU97 ; v U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.

BJE 42

Abstract: 9 BJE 42
Contextual Info: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • ^53*131 DDETlfl^ 40fl BLV99 APX N-P-N silicon planar epitaxial transistor primarily intended for use as a driver-stage in base stations in the 900 MHz communications band. Features: • emitter-ballasting resistors for an optimum temperature profile

transistor IR 840

Abstract: TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554
Contextual Info: Philips Semiconductors 711005b 0Qb312? 014 IPHIN Product specification BLV193 UHF power transistor PHILIPS INTERN ATI ON AL FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION

BFG135 power amplifier for 900Mhz

Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

Contextual Info: Philips S em iconductors D03004b M MB A P X Product specification VHF power MOS transistor BLF346 N AMER PHILIPS/DISCRETE FEATURES b^E D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

transistor pr 606 j

Abstract: fah1 13B1 LR38585 LZ2316AR
Contextual Info: SHARP LZ2316AR BACK LZ2316AR Dual-power-supply 5 V/12 V Operation 1/3-type B/W CCD Area Sensor with 270 k Pixels DESCRIPTION The LZ2316AR is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply. With approximately 270 000 pixels

BLF544B

Abstract: 74649
Contextual Info: Product specification Philips Sem iconductors bb£3^31i 0030137 0^2 M A P X UHF push-pull power MOS transistor N AMER PHILIPS/DISCRETE BLF544B b*îE D- PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

transistor tt 2222

Abstract: ic TT 2222 BLW 89 blw89 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110fl5b GübBB?'! EÔ4 PHIN BLW 89 J \ _ U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

TT 2222

Contextual Info: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile

Contextual Info: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features: