FMMT458 TA Search Results

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

pnp transistor 1000v

Abstract: FMMT558 FMMT458 ZTX558 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

FMMT458

Abstract: FMMT558
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 - JA N U A R Y 1996 FEATURES * Excellent hFE characteristics at lc=100mA * Low saturation voltages COMPLEMENTARY TYPE - FMMT458 PARTMARKING D E T A IL558 CH ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: FMMT458 NPN Type Elektronische Bauelemente Palstic Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector Power dissipation 3 3 PCM : 0.5 W Collector Current ICM : 225 mA Collector-base voltage

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

pnp transistor 1000v

Abstract: FMMT558 FMMT458 DSA003671
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 3 - OCTOBER 1995_ FEATURES * 400 Volt VCE0 COMPLEMENTARY T Y P E - FMMT558 PARTMARKING D ETA IL- 458 SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

FMMT458

Abstract: FMMT558 ic tba 500 DSA003671
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

FMMT458

Abstract: fmmt458ta 400V 100MA NPN SOT23
Contextual Info: A Product Line of Diodes Incorporated FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 400V • Case: SOT23 • IC = 225mA high Continuous Collector Current • UL Flammability Rating 94V-0 • ICM = 1A Peak Pulse Current

FMMT458TA

Abstract: fmmt458 marking 458
Contextual Info: A Product Line of Diodes Incorporated FMMT458 400V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • 500mW Power Dissipation 225mA Continuous Collector Current IC Up to 1A Peak Pulse Current

Contextual Info: Transistors SMD Type Product specification FMMT458 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 400 Volt VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

FMMT458

Abstract: FMMT558 Transistor B C 458 DSA003695
Contextual Info: FMMT458 1.6 Tamb=25°C IC/IB =20 - Volts - (Volts) 1.2 1.0 0.8 0.01 0.1 1 10 0.001 20 1 10 VCE(sat) v IC VCE(sat) v IC VCE =10V -55°C +25°C +100°C +175°C 1.6 300 20 IC/IB =10 1.0 200 - (Volts) 1.4 1.2 0.8 1.2 0.6 0.4 0.6 V 100 0.2 0.4 0.2 0.01 0.1 10

smd transistors 458

Abstract: FMMT458 fmmt458 smd FMMT458 TA
Contextual Info: Transistors SMD Type High Voltage Transistor FMMT458 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 400 Volt VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

gyrator

Abstract: FMMT458 DIODE z1 MOSFET sot23-6 z1 sot23 ZVN4525 Z1 SOT89 ZVN4525E6 ZVN4525G ZVN4525Z
Contextual Info: Design Note 60 Issue 1 May 2001 Zetex High Voltage MOSFETS in Call Router Circuits A router is a device that receives data from a telephone line and decides which route the data should be sent. Routers are used extensively in computer networks. They are increasingly being

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX458 ISSUE 3 - OCTOBER 1995 FEATURES * 400 Volt V rFn * Ptot= 1 Watt CO M PLEM EN TA RY TYPE PARTM ARKING D E T A IL - FCX558 N58 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SY M BO L VALUE U N IT VCBO 400 V V CEO

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 -JUNE 1996 O FEATURES * Fast Switching * High hFE. COMPLEMENTARY TYPE - BST16 PARTMAKING DETAIL - AT1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V CBO 400 V Collector-Emitter Voltage VcEO

sot89

Abstract: BST16 FMMT458 NPN SOT89 BST39 DSA003681
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST39 ✪ ISSUE 4 – JUNE 1996 FEATURES * Fast Switching * High hFE. C COMPLEMENTARY TYPE – BST16 PARTMAKING DETAIL – AT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

n58 sot89

Abstract: FCX458 FCX558 FMMT458 DSA003684 CM500
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX458 ISSUE 3 – OCTOBER 1995 FEATURES * 400 Volt VCEO * Ptot= 1 Watt COMPLEMENTARY TYPE – PARTMARKING DETAIL – C FCX558 N58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 -JU N E 1996 FEATURES * Fast Switching * High hFE. BST39 O COMPLEMENTARY T Y P E - BST16 PARTMAKING D ETA IL- AT1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Em'rtter Voltage

FMMT458

Abstract: FZT458 FZT558 DSA003709
Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT458 ISSUE 4 – JANUARY 1996 FEATURES * 400 Volt VCEO COMPLEMENTARY TYPE – PARTMARKING DETAIL – C E FZT558 FZT458 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400

transistor tic 2260

Abstract: tic 2260
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX458 ISSUE 3 - OCTOBER 1995_ FEATURES * * 400 V o lt V CE0 Pt0,= 1 W a tt CO M PLEM ENTARY TYPE - FCX558 PARTM AR KIN G DETAIL - N58 #• B ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER VALUE

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSU E 4 - JANUARY 1996_ FEATURES * 400 Volt V,CEO C O M P L E M E N T A R Y TY PE P A R T M A R K IN G D ETA IL - FZT558 FZT458 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Collector-Base Voltage

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT458 ISSU E 4 - JANUARY 1996_ FEATURES * 400 Volt V,CEO C O M P L E M E N T A R Y T Y PE P A R T M A R K IN G D E T A IL - FZT558 FZT458 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE