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FLX102M Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLX102MH-12		Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	47.05KB	1
FLX102MH-12		Unknown	FET Data Book	Scan	PDF	98.96KB	2

FLX102M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLX102MH-12 Abstract: cu2cu FUJITSU XBAND FLX102MH12 Contextual Info: n FLX102MH-12 X-Ku Band Power GaAs FETs . I 1jU FEATURES • • • • • High Output Power: P-\|dB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX102MH-12 is a power GaAs FET that is designed for general	OCR Scan	flx102mh-12 cu2cu fujitsu xband flx102mh12	PDF
Contextual Info: F\|.fjU,. FLX102MH-12 X-Ku Band Power GaAs FETs r U J I I ->U FEATURES • • • • • High O utput Power: P-\|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION	OCR Scan	flx102mh-12 flx102m 02mh-12	PDF
FLK202MH-14 Abstract: FLK052WG Contextual Info: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <tB) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH	OCR Scan	flx102mh-12 2mh-12 flk012w flk022w +6flk052w flk102mh-14 flk202mh-14 flr016fh flr026fh flk052wg	PDF
FLR024FH Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV Contextual Info: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D	OCR Scan	flm7785-8c/d flm8596-4c flm8596-8c flr014fh +13flr014xp flc311mg-4 fls31me 36dbm fls50 flr024fh flx102mh-12 flx202mh-12 fls09me fls09 flr016xp fsc10fa flr056xv	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	flc301xp flc301xp equivalent flk052xp fujitsu gaas fet application note +6iss1b1 cs98e1v6r800-k41d cs98e1v6r000-k41b fujitsu "application notes fjs-ds-158 fll171	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	fmc141401-02 fujitsu gaas marking code fujitsu k022 fll300-2 +6fll55 fsx52wf fujitsu l101 fujitsu x51 fll200-2 fll300-1	PDF
PT 1440 Contextual Info: F L X 102 M H - ¡2 X -k ii B a n d Power iaAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol uonamon Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs ~5 V 7.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature	OCR Scan	pt 1440	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	flx202mh-12 flk202mh-14 fsx52wf fujitsu "application notes +8fsx51wf nf037 fmc141401-02 fll101 fll171 fmc1414p1-02 fll55 fll120mk	PDF