FLL107ME Search Results

FLL107ME

Abstract: 842 FET ADD20
Contextual Info: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to

Contextual Info: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to

FLL107ME

Abstract: fujitsu gaas fet fujitsu gaas fet L-band
Contextual Info: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-|C|g=29.5dBnn Typ. High Gain: G-|C|g=13.5dB (Typ.) High PAE: riadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to

FLL107ME

Contextual Info: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to

Contextual Info: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to

048 J50

Abstract: EUDYNA eudyna fet Eudyna Devices FLL107ME fujitsu gaas fet fujitsu GHz gaas fet eudyna GaAs FET
Contextual Info: FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.