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FLK017WF Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLK017WF		Eudyna Devices	X, Ku Band Power GaAs FET	Original	PDF	108.64KB	4
FLK017WF-E1		Fujitsu	FET: P Channel: ID 0.09 A	Original	PDF	103.08KB	4

FLK017WF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general	Original	flk017wf	PDF
16GHZ Abstract: FLK017WF Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general	Original	flk017wf 16ghz	PDF
Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general	Original	flk017wf	PDF
FLK017WF Abstract: fujitsu gaas fet Contextual Info: FLK017WF - X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-\|<jB = 20.5dBm Typ. High Gain: G-j^B = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package	OCR Scan	flk017wf fcsi0598m200 fujitsu gaas fet	PDF
Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general	Original	flk017wf fcsi0598m200	PDF
FLK017WF Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general	Original	flk017wf fcsi0598m200	PDF
Band Power GaAs FET Abstract: Flk017wf ku 606 ku 201 Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general	Original	flk017wf band power gaas fet ku 606 ku 201	PDF
CD 294 Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package	OCR Scan	flc167wf fcsi0598m200 cd 294 fll357 +8348db fll400ip-2 flk102mh-14 hemt low noise die fujitsu gaas fet amplifier flk017xp fll120 fujitsu gaas fet	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	fll810iq-4c fll600iq-2 fll400ip-2 fll300il-1 +14fll200ib-1 fll300il-2 fll200ib-2 fll300il-3 fll200ib-3 fll57mk elm7785-60f fll400ip2 flc107 flk027wg flc057wg fll357 fll177 fll357me	PDF