FLASH MEMORY 48F Search Results

a21l

Abstract: MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 96M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM MB84VFAF5F5J1-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V

SA153

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 128M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ128B-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V

012F

Abstract: reset nand flash 804aH
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.0 Date: August 4th, 2004 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY Document Title MuxOneNAND

Spansion gl128

Abstract: sa5888 SPANSION gl512 27631 S29PL127J S75PL127J S75PL127JBD Spansion s29pl127j GL128 GL512
Contextual Info: S75PL127J MCPs Stacked Multi-Chip Product MCP CODE Flash, pSRAM and DATA Flash 128M (8M x 16-Bit CMOS 3.0 VoltOnly, Simultaneous Operation, Page Mode CODE Flash Memory, with 64M/32M (4M/2M x 16-Bit) pSRAM and 512M/256/128M (32M/16M/8M x 16Bit) Data Flash Memory

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

OTO70

Contextual Info: rfb FLASH MEMORY ☆ New product * Under developm ent • FLASH MEMORIES Continued <Boot Block*4 Smart Voltage Flash Memory> Capacity 4M 8M 16M Bit configuration x 16 x 16 x 16 Block configuration Access time (ns) MAX. (Vcc =5 V) Model No. Supply voltage

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

BA114

Abstract: BA107 samsung ba92 BA122
Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

BA961

Abstract: BA43 48FBGA samsung nor flash ba107
Contextual Info: K8D6x16UTM / K8D6x16UBM NOR FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1

BA107

Abstract: ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941
Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

BA17

Abstract: K8D3216UT K8D3216
Contextual Info: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package

Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

BA37

Abstract: ba37 diode K8D1716UBC 48FBGA K8D1716U K8D1716UTC samsung nor flash BA2411 150us
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations

Contextual Info: IS29GL128 128 Megabit 16384K x 8-bit / 8192K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations

EN29LV640AB

Abstract: EN29LV640AT marking SG32 66-SA 56-SA 60-SA 76-SA 88-SA en29lv640A 68-SA
Contextual Info: EN29LV640A EN29LV640A 64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • JEDEC Standard compatible • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

diode ba102

Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
Contextual Info: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations

BA102

Abstract: BA127 Diode diode ba102 BA114
Contextual Info: TC58FVT641/B641FT/XB-70,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

Contextual Info: IS29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance

Contextual Info: Intel StrataFlash£ Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash density: 128- and 256-Mbit — LPSDRAM density: 128, 256 Mbit — Top/Bottom parameter flash

EN29LV640AT

Contextual Info: EN29LV640A EN29LV640A 64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • JEDEC Standard compatible • Single p wer supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations