OTO70 Search Results

Contextual Info: BENCHMARQ_ bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power >- Automatic write-protection during power-up/power-down cycles >• Industry-standard 32-pin 512K x 8 pinout >- Conventional SRAM operation;

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D • 7 T b 4 1 4 2 0 0 1 7 5 ^ 4 7^4 PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL)

AO-A15

Abstract: 8l35 MCM72F6 MCM72F7
Contextual Info: MOTOROLA SEMICONDUCTOR Order TECHNICAL DATA this document by MCM72F6/D — – Advance Information 512KB and 1MB Synchronous Fast Static RAM Module MCM72F6 MCM72F7 The MCM72F6 512KB is configured as 64K x 72 bits and the MCM72F7 (1 MB) is configured as 128K x 72 bits, Both are packaged in a 168 pin dual–in–line memory

Contextual Info: IB M 11 M 16730C B 16M x 72 D R A M M O D U LE Features • 1 6 8 Pin J E D E C S tandard, 8 Byte D ual In-line M e m o ry M odule • Au contacts • 1 6 M x 7 2 F ast P a g e M o d e D IM M • System P erform ance Benefits: • P erform ance: • O ptim ized for E C C applications

ess u17

Abstract: 2m x 36 PQ351
Contextual Info: IB M 1 1 D 2 3 6 0 B A IB M 1 1 E 2 3 6 0 B A 2M x 36 D R A M M odule Features All inputs & outputs are fu lly TTL & CM O S com patible Fast Page M ode access cycle Refresh M odes: R AS -O nly and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Colum n

Contextual Info: b b q 4 0 1 5 /b q 4 0 1 5 Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4 ,1D4,304-bit static RAM organized as 524,288 words by 8 bits. The intégral control circuitry and lithium

Contextual Info: CMOS SRAM KM68512AL/AL-L 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access T im e : 55, 70ns Max. • Low Power Dissipation Standby (CMOS) : 10,« W(Typ.) L-Version 5,uW(Typ.) LL-Version Operating : 35mW(Typ.) • Single 5 ± 1 0 % V power supply

KM416S4020

Contextual Info: KM416S4020B CMOS SDRAM 2M x 16Bitx 2 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM416S4020A is 67,108,864 bits synchronous high data • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation rate Dynamic RAM organized as 2 x 2,097,152 words by 16

KM688

Contextual Info: BiCMOS SRAM KM68B261A 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (f = 100 MHz.)

TCA 255

Abstract: BQ2001 27217
Contextual Info: bq2001 BENCHMARQ h Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Management Unit (EMU) is a lowpower microprocessor peripheral providing battery-management ser­

Contextual Info: bq4015/bq4015Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The in te g r a l co n tro l c ir c u itr y and

Contextual Info: b q 4014 /b q 40 14 Y fe r B EN CH M A R Q 256Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The in ­ tegral control circuitry and lithium

Contextual Info: CMOS SRAM KM681OOOBL/BL-L 131,072 WORD x 8 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A c c e s s T im e : 55, 70, 85, 100ns M ax. • L o w P o w e r D issipation S ta n d b y (C M O S ) : 10.«W(Typ.) L-Version 5/i WfTyp.) LL-Version O p era tin g

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: p v F n h a n r pH dm2202/2212 edram V 1Mb x 4 Enhanced tynamic RAM i l Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

HY5DU641622AT-55

Contextual Info: 64M 4Mx16 DDR SDRAM HY5DU641622AT Revision 0.6 April 2001 This document is a general product description and is subject to change without notice. 35 HY5DU641622AT 64Mb(4Mx16) D ouble Data Rate SDRAM PRELIMINARY DESCRIPTION The Hynix HV5DU641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the

Contextual Info: Enhanced DM 1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM IVfemoiy Systems be. Product Specification Features Architecture • 2 KByte SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

lm358 current sense

Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
Contextual Info: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201

Contextual Info: PRELIMINARY KM68V1OOOBL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3//WfTyp.) L-Version 1.5^WfTyp.) LL-Version Operating

W27e256

Abstract: W29CO20 *27e256 w29c020-70 CA0008 W27E257-12 W27E257-10 Winbond w27e256
Contextual Info: W27EOlO 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27EOlO is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The W27EOlO provides an electrical chip erase function.

Contextual Info: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns(max.) ■ Low Power Dissipation Standby OTL) 3mA (max.) (CMOS) : 100,« A (max.) Operating KM616V513-17 :130m A (max.)

Contextual Info: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description > D ata retention in th e absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy