KM688 Search Results

cmos static ram 1mx8 5v

Abstract: KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM
Contextual Info: Preliminary KM688100 Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date Remark June 22, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

KM688

Contextual Info: BiCMOS SRAM KM68B261A 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (f = 100 MHz.)

Contextual Info: PRELIMINARY KM68B65A BiCMOS SRAM BiCMOS 8K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns • Low Power Dissipation —Standby: 20mA —Operating: 150mA, 130mA, 110mA • Single 5V±10% Power Supply

68B10

Abstract: KM688 KM68B1002-8
Contextual Info: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)

Contextual Info: SAMSUNG ELECTRONICS INC h? E D • 7^4142 KM68B1002 OD17b^l I bb BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8 ,9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)