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KM688100 Datasheets (8)

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Samsung Electronics

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
KM688100LR-10L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF	147.7KB	9
KM688100LR-7L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF	147.7KB	9
KM688100LRI-10L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF	147.7KB	9
KM688100LRI-7L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF	147.7KB	9
KM688100LT-10L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF	147.7KB	9
KM688100LT-7L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF	147.7KB	9
KM688100LTI-10L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF	147.7KB	9
KM688100LTI-7L	Samsung Electronics	1Mx8 bit Low Power and Low Voltage CMOS Static RAM	Original	PDF	147.7KB	9

KM688100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
cmos static ram 1mx8 5v Abstract: KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM Contextual Info: Preliminary KM688100 Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date Remark June 22, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	Original	km688100 cmos static ram 1mx8 5v km688100lr-10l km688100lr-7l +3km688100lt-10l km688100lt-7l 1mx8 bit low power cmos static ram	PDF
68B10 Abstract: KM688 KM68B1002-8 Contextual Info: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)	OCR Scan	km68b1002 68b1002j-8 68b1002j-9 68b1002j-10 +868b1002j-12 68b1002j-15 km68b1002j 32-soj-400 576-bit 68b10 km688 km68b1002-8	PDF
Contextual Info: SAMSUNG ELECTRONICS INC h? E D • 7^4142 KM68B1002 OD17b^l I bb BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8 ,9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)	OCR Scan	km68b1002 od17b km68b1002j-8 175ma +5km68b1002j-9 km68b1002j-10 165ma km68b1002j-12 155ma	PDF

Catalog Datasheet

Type

Document Tags

PDF

cmos static ram 1mx8 5v

Abstract: KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM
Contextual Info: Preliminary KM688100 Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date Remark June 22, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Original

km688100 cmos static ram 1mx8 5v km688100lr-10l km688100lr-7l +3

PDF

68B10

Abstract: KM688 KM68B1002-8
Contextual Info: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)

OCR Scan

km68b1002 68b1002j-8 68b1002j-9 68b1002j-10 +8

PDF

Contextual Info: SAMSUNG ELECTRONICS INC h? E D • 7^4142 KM68B1002 OD17b^l I bb BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8 ,9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

OCR Scan

km68b1002 od17b km68b1002j-8 175ma +5

PDF