KM68B1002J Search Results

Contextual Info: KM68B1002 BiCMOS SRAM 128Kx8 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10 nnA(max.) Operating KM68B1002J-8 :175mA(Max.) KM68B1002J-10: 165 mA(Max )

KM68B1002J-10

Abstract: KM68B1002J-8 KM68B1002J-12 KM68B1002J-15
Contextual Info: SAMSUNG ELECTRONICS INC b?E d m 7Tb4me oanb^i ^bb BiCMOS SRAM KM68B1002 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9 ,1 0 ,1 2 , 15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

Contextual Info: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common Input and output lines and has an output enable pin which operates

KM68B1002-10

Contextual Info: SAMSUNG ELECTRONICS INC b4E T> m T T b M m E [][]:L422G 200 PRELIMINARY KM68B1002 BiCMOS SRAM 131,072 WORD X 8 Bit FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 10mA (max.)

68B10

Abstract: KM688 KM68B1002-8
Contextual Info: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)

ort01

Contextual Info: KM68B1002 BiCMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 80mA(Max.) (CMOS): 10mA(Max.) Operating KM68B1002 - 8 : 175mA(Max.) KM68B1002 -1 0 : 165mA{Max.)

A400M

Contextual Info: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)

KM68B1002J-10

Abstract: KM68B1002J-12 KM68B1002J-15 KM68B1002J-8 68B10 KM68B1002-15
Contextual Info: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common input and output lines and has an output enable pin which operates

Contextual Info: SAMSUNG ELECTRONICS INC h? E D • 7^4142 KM68B1002 OD17b^l I bb BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8 ,9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)