SGA33 Search Results

SGA-3363Z

Abstract: SGA3363Z
Contextual Info: SGA3363Z SGA3363Z DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown

Contextual Info: VITESSE SEMICONDUCTOR bSE » m ^SGa331 □DOGfl^D 4bl • VTS VSP947 _ . „ Product P review High Performance Pentium,M Processor Cache Controller for Multiprocessor Systems FEATURES • • • • • • • • Optimizes Pentium Processor Performance

Contextual Info: SGA3386Z SGA3386ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA3386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

SGA-3386Z

Abstract: rfmd mmic
Contextual Info: SGA3386Z SGA3386ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA3386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

Contextual Info: SGA3363Z SGA3363Z DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown

SGA3363Z

Abstract: SGa-3363Z rf mmic marking code 26 SOT363 MARKING 207
Contextual Info: SGA3363Z SGA3363Z DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown

JESD22-B102-C

Abstract: SOT-86 sot86 transistor c 5586 q404 transistor SGA-6486Z SGA-6286 JESD22-B102C q402 transistor transistor 5586
Contextual Info: Reliability Report SGA/SGC Series in SOT-86 Package SnPb Plated SGA-2186 SGA-2286 SGA-2386 SGA-2486 SGA-3286 SGA-3386 SGA-3486 SGA-3586 SGA-4186 SGA-4286 SGA-4386 SGA-4486 SGA-4586 SGA-5286 SGA-5386 SGA-5486 SGA-5586 SGA-6286 SGA-6386 SGA-6486 Matte Sn, RoHS Compliant

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

BGA-101P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

SGA3363Z

Abstract: sga-3363z
Contextual Info: SGA-3363 SGA-3363Z Product Description The SGA-3363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

4kw marking

Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

AN-075

Abstract: SGA-3386 SGA-3386Z
Contextual Info: SGA-3386 SGA-3386Z Product Description The SGA-3386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities

32 KB SRAM

Abstract: DS05-50208-1E SWITCH SA125
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash

32 KB SRAM

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash

DS05-20905-1E

Abstract: BGA-48P-M13 FPT-48P-M19 MBM29DL64DF MBM29DL64DF-70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF-70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50214-1E 3Stacked MCP Multi-Chip Package FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) Mobile FCRAM & 4M (×16) STATIC RAM MB84VR5E3J1A1-85 • FEATURES • Power Supply Voltage of 2.7 to 3.1V • High Performance

SGA13

Contextual Info: MB84VD23481FJ-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: MB84VD23381FJ-80 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50221-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84VD23280FA-70 • FEATURES • • • • • Power Supply Voltage of 2.7 V to 3.1 V

HMC676LC3C

Contextual Info: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE

SGA23

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.