FIG11 Search Results

6968e

Abstract: TF6968E D002P 65a3
Contextual Info: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9  P RDS(ON), VGS # 9  P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications

Contextual Info: ＩＧＢＴ Ｍｏｄｕｌｅ－Ｓｉｘ－Ｐａｃｋ ＰＴＭＢ７５Ｂ１２ ７５ Ａ，１２００Ｖ □ 回 路 図 ： ＣＩＲＣＵＩＴ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 94 80 4-Ø5.5 7-M4 2 3 1 18

Contextual Info: ＩＧＢＴ Ｍｏｄｕｌｅ－Ｃｈｏｐｐｅｒ ＰＲＨＭＢ７５Ｂ１２Ａ ７５ Ａ，１２００Ｖ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 11 2 1 C2E1 1 (E2) 2 (C1) 3 94 80 ± 0 .2 5 12 11 2-Ø 5.5 12 7

Contextual Info: ＩＧＢＴ Ｍｏｄｕｌｅ－Ｃｈｏｐｐｅｒ ＰＲＨＭＢ５０Ｂ１２ ５０ Ａ，１２００Ｖ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ E2 2 (C1) 3 94 80 ± 0 .2 5 12 11 2 1 2-Ø 5.5 12 7 6 3 12 (C2E1)

Contextual Info: ＩＧＢＴ Ｍｏｄｕｌｅ－Ｃｈｏｐｐｅｒ ＰＣＨＭＢ５０Ｂ１２Ａ ５０ Ａ，１２００Ｖ □ 回 路 図 ： ＣＩＲＣＵＩＴ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 12 E2 2 (C1) 3 94 80 ± 0 .2 5

Contextual Info: ＩＧＢＴ Ｍｏｄｕｌｅ－Ｓｉｘ－Ｐａｃｋ ： ＣＩＲＣＵＩＴ □ 回 路 図 ＰＴＭＢ５０Ｂ１２Ｃ ５０ Ａ，１２００Ｖ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 93.00 4x 15.24= 60.96

Contextual Info: ＩＧＢＴ Ｍｏｄｕｌｅ－Ｃｈｏｐｐｅｒ ＰＣＨＭＢ５０Ｂ１２ ５０ Ａ，１２００Ｖ □ 回 路 図 ： ＣＩＲＣＵＩＴ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 12 11 94 80 ± 0 .2 5 12 11

Contextual Info: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: IGBT SPseries PTMB75B12C SixSix-Pack 75A 1200V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 330g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range

Contextual Info: PCHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation

Contextual Info: PRHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation

Contextual Info: IGBT MODULE PDMB75B12 Dual 75A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 320g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation

CI 3060 elsys

Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
Contextual Info: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.

AN8028

Abstract: Power Supply Control IC IAN8028 SIP009-P-0000 pulse transformer fet 3B7 transformer
Contextual Info: Panasonic Voltage Regulators AN8028 Self-excitation RCCArtificial ResonanceType Power-supply Supporting 1CforAC-DC Converter Control • Overview The AN8028 is an 1C for controlling the switching power supply, employing the RCC artificial resonance type con­

TK10203AM9

Contextual Info: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

IRF6714MTR1PBF

Abstract: IRF6714MTRPBF stencil
Contextual Info: PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l RoHs Compliant and Halogen Free  Low Profile <0.6 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters

CM105B104K25A

Abstract: CT21X5R105K25A TK10202AM9 AP-478
Contextual Info: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

MUN2216

Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)

EEEFK1V101AP

Abstract: d8 d8
Contextual Info: Aluminum Electrolytic Capacitors/ FK Surface Mount Type Series: FK FK Type: V High temperature Lead-Free reflow suffix:A✽ • Features ● Endurance: 2000 h at 105 °C ● Low impedance (40 % to 60 % less than FC series) Miniaturized (30 % to 50 % less than FC series)

EEE1CA101WAP

Abstract: EEE1CA100AR
Contextual Info: Aluminum Electrolytic Capacitors/ S Surface Mount Type Series: S Type: V S High temperature Lead-Free reflow suffix:A✽ • Features ● Endurance: 85 °C 2000 h ● Vibration-proof product is available upon request.(φ8 mm and larger) ● RoHS directive compliant

Contextual Info: Aluminum Electrolytic Capacitors/TP Surface Mount Type Series: TP TP Type: V High temperature Lead-Free reflow suffix:A✽ • Features ● ● ● ● ● Lower ESR at Low temperature after endurance Endurance: 3000 h at 125 °C(D8 size : 2000 h) Automotive

KHB7D5N60F1

Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Contextual Info: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KHB5D0N50F

Abstract: KHB5D0N50P KHB5D0N50F2
Contextual Info: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB019N20F1

Abstract: KHB019N20F2 KHB019N20P1
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters