FET N BS170 Search Results

fet n BS170

Contextual Info: WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET ABSOLUTE MAXIMUM RATINGS FEATURES • ■ ■ TC = +25°C unless otherwise specified Reliable, low cost, plastic package European TO-92 pin-out Low capacitance Drain-Source Voltage. 60V

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

pin diagram of bs170

Abstract: bs170 TO-92 TO 92 BS170
Contextual Info: TELEDYNE COMPONENTS ôcil7bOE 00077^^ 5 • TSC 3bE D T -S 5 -2 .5 WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ Reliable,low cost, plastic package European TO -92 pin-out Low capacitance

Contextual Info: SOT23 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL Dr ai n-Sou rce Vo l t ag e V DS VALUE UNIT 60

BS170 MOTOROLA

Contextual Info: MOTOROLA Order this document by BS17Q/D SEMICONDUCTOR TECHNICAL DATA TM OS FET S w itching N -C h a n n e l — E nhancem en t 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 |xs

BS170 MOTOROLA

Abstract: us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola
Contextual Info: MOTOROLA Order this document by BS170/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs

BS170P

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P IS S U E 2 - S E P T 93 FE A T U R E S * 60 Volt V DS * R D S c n r5 a REFER TO ZVN3306A FOR G RAPH S ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current a tT amb=25°C

BS170F

Abstract: ZVN3306F MV SOT23
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω S D G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching N -Channel — Enhancement BS170 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating D ra in -S o u rce Voltage G ate-S ource Voltage — Continuous — Non-repetitive tp < 50 pis Drain CurrentO) Total Device Dissipation @ Ta = 25“C

MV SOT23

Abstract: BS170F ZVN3306F
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C

MV SOT23

Abstract: BS170F mv BS170F DSS SOT23 ZVN3306F DSA003678
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching N-Channel — Enhancement 1 DRAIN î GATE 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetltive tp < 50 ja s Symbol Value Unit Vd S 60 Vdc VGS

BS170P

Abstract: fet to92 ZVN3306A equivalent of BS170P DSA0037520 DSA003752
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS on =5Ω D G REFER TO ZVN3306A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb =25°C

BS170A

Abstract: EI5D
Contextual Info: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ^5 SEM ICO ND/ D ISCR ETE D eT | 7 H 5 0 5 3 3 00PSS17 ' 95D 05517 D 35-25 N-channel enhancem ent mode vertical D M O S FET BS170 FEAT U RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown

BS170

Abstract: bs 170
Contextual Info: BS170* CASE 29-04, STYLE 30 TO-92 TO-226AA 1 Drain MAXIMUM RATINGS Rating Sym bol V a lue U n it Vd s 60 Vdc Vg S V GSM ±20 ±40 Vdc Vpk Id 0.5 Ado Pd 350 mW TJ> T stg - 5 5 to + 1 5 0 *C D rain-S ource V o ltage G ate-S ource V oltage — C o ntin u o u s

16V8Q

Contextual Info: PLESSEY SEMICOND/DISCRETE 7 220zjj KLESSEY SE MI CO ND/DISCRETE □3 DiF 7 5 S D S 3 3 03E 06 7 2 0 D T - IVI-channel enhancement mode vertical D M O S FET BS170F L S ' * A B S O L U T E M A X I M U M R A T IN G S Parameter Sym b o l Drain-source voltage

BS170 MOTOROLA

Abstract: T0226 S-60
Contextual Info: BS170* CASE 29-04, STYLE 30 TO-92 T0-226AA M A X IM U M RATINGS Rating Symbol Value Unit D r a in - S o u r c e V o lta g e V DS 60 Vdc G a t e - S o u r c e V o lt a g e V GS D r a in C u r r e n t ! 1) 0 .5 'D T o t a l D e v ic e D is s ip a t io n (a T ^ = 2 5 CC

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

8SS138

Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
Contextual Info: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BS107 spice

Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
Contextual Info: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT