FET E 102 Search Results

Contextual Info: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt M TD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N-Channel Enhancement Mode Silicon Gate

AN569

Abstract: U425
Contextual Info: Order this data sheet by MTH6N100E/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s MTH6NIOOE Data sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.

MGFC36V7785A

Abstract: fet 30 f 124
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The

op072

Abstract: 9137 006 208 ea 7401 il 13366 MGFK38A 50GHZ MGFK38A3745 F1375
Contextual Info: , MITSUBISHI SEMICONDUCTOR cGaAs FET> MGFK38A3745 ^ 13.75 - 14.50G H z B A N D 6 W IN T E R N A L L Y M A T C H E D GaAS FET DESCRIPTION OUTLINE DRAWING The MGFK38A3745 is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 13.75 -14.50

Contextual Info: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D TM O S E-FET High Density Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mfl T h is a d v a n c e d h igh c e ll d e n s ity H D T M O S p o w e r FE T is

DELTA 0431

Abstract: MGFC45V5867 PT 8A 3280
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5867 5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING Unii:millimeters inches The MGFC45V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz

3642G

Abstract: MGFC44V3642
Contextual Info: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2

MGFC42V5867

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package

A2305

Abstract: A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969
Contextual Info: 2SK1969-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R I E S O utline D raw ings I F e a tu r e s *Hig i current ' Low on-resistance 'N o secondary breakdown ' L o v driving power »Hig i forward Transconductance 'Avalanche-proof

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to Ku band Unit: millimeters inches

A2103

Abstract: 2SK 1110 2SK1017-01 SC-65 T151 A2 104 DIODE 3d
Contextual Info: 2SK1017-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings ¡Features 'High speed switching •Low on-resistance •No secondary breakdown 'Low driving power ' High voltage >VGSS —±30V Guarantee »Avalanche-proof

MGFC47A4450

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A4450 4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47A4450 device is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0GHz band amplifiers. The hermetically sealed metal-ceramic package

ad 152 transistor

Abstract: NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high

MGFC47V5864

Abstract: mitsubishi optical transmitter
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package

A2118

Abstract: SC-65
Contextual Info: 2SK1081 -01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • L :>w on-resistance • No secondary breakdown • Low driving power • High voltage • V GSs— ±30V Guarantee

5282 F 1349

Contextual Info: _ DATA SHEET_ IV IF f * / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ESC R IPTIO N The NE329S01 is a Hetero Junction FET that utilizes the

Contextual Info: MOTOROLA O rder this docum ent by M TY25N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY25N60E T M O S E-FET™ P o w e r F ield E ffe c t T ra n s is to r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate • • • TM OS POWER FET

Contextual Info: MOTOROLA Order this document by MTY25N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY25N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 25 AMPERES 600 VOLTS

k 246 transistor fet

Abstract: transistor motorola 246 6v 100 ohm role AN569 MTP60N06HD transistor MOSFET 924 ON
Contextual Info: MOTOROLA Order this document by MTP60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS

transistor MOSFET 924 ON

Contextual Info: MOTOROLA Order this document by MTP60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS

3692 nec

Contextual Info: PRELIMINARY DATA SHEET IV IF f / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

PM45502C

Abstract: HITACHI PM45502C pm4550
Contextual Info: HITACHI PM45502C S IL IC O N N -CH AN N EL P O W E R MOS FET M O D ULE H IG H S P E E D P O W E R S W IT C H IN G • FEATU RES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation

HIP4081 pwm controller

Abstract: AN9325 schematic diagram h bridge ups HIP4081 stepper motor hip4081 HIP4080 HIP4081A HIP4081IB HIP4081IP HARRIS SEMICONDUCTOR APPLICATION NOTES
Contextual Info: HIP4081 S E M I C O N D U C T O R 80V/2.5A Peak, High Frequency Full Bridge FET Driver March 1995 Features Description • Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic SOIC and DIP

UJ04

Abstract: A21-12 A2112 2SK1023-01
Contextual Info: 2SK1023-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - II • Features • • • • • • S E R I E S lOutline Drawings High speed switching l ow on-resistance No secondary breakdown l ow driving power High voltage V gsb- ± 30V Guarantee • A v a la n c h e - p r o o f