FET E 102 Search Results

Contextual Info: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt M TD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N-Channel Enhancement Mode Silicon Gate

AN569

Abstract: U425
Contextual Info: Order this data sheet by MTH6N100E/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s MTH6NIOOE Data sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.

MGFC36V7785A

Abstract: fet 30 f 124
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The

op072

Abstract: 9137 006 208 ea 7401 il 13366 MGFK38A 50GHZ MGFK38A3745 F1375
Contextual Info: , MITSUBISHI SEMICONDUCTOR cGaAs FET> MGFK38A3745 ^ 13.75 - 14.50G H z B A N D 6 W IN T E R N A L L Y M A T C H E D GaAS FET DESCRIPTION OUTLINE DRAWING The MGFK38A3745 is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 13.75 -14.50

Contextual Info: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D TM O S E-FET High Density Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mfl T h is a d v a n c e d h igh c e ll d e n s ity H D T M O S p o w e r FE T is

DELTA 0431

Abstract: MGFC45V5867 PT 8A 3280
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5867 5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING Unii:millimeters inches The MGFC45V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz

3642G

Abstract: MGFC44V3642
Contextual Info: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2

MGFC42V5867

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to Ku band Unit: millimeters inches

MGFC47A4450

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A4450 4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47A4450 device is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0GHz band amplifiers. The hermetically sealed metal-ceramic package

ad 152 transistor

Abstract: NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high

MGFC47V5864

Abstract: mitsubishi optical transmitter
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package

nec 2571

Abstract: nec 2571 4 pin NEC 1357 ez 946 k 3918 fet IMS 3630
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION P A C K A G E D IM EN SIO N S unit: mm The N EZ Series of microwave power GaAs FE T s offer 0.5 +0.1 high output power, high gain and high efficiency at C-band

A2118

Abstract: SC-65
Contextual Info: 2SK1081 -01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • L :>w on-resistance • No secondary breakdown • Low driving power • High voltage • V GSs— ±30V Guarantee

Contextual Info: MOTOROLA Order this document by MTY25N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY25N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 25 AMPERES 600 VOLTS

k 246 transistor fet

Abstract: transistor motorola 246 6v 100 ohm role AN569 MTP60N06HD transistor MOSFET 924 ON
Contextual Info: MOTOROLA Order this document by MTP60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS

transistor MOSFET 924 ON

Contextual Info: MOTOROLA Order this document by MTP60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS

3692 nec

Contextual Info: PRELIMINARY DATA SHEET IV IF f / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

HIP4081 pwm controller

Abstract: AN9325 schematic diagram h bridge ups HIP4081 stepper motor hip4081 HIP4080 HIP4081A HIP4081IB HIP4081IP HARRIS SEMICONDUCTOR APPLICATION NOTES
Contextual Info: HIP4081 S E M I C O N D U C T O R 80V/2.5A Peak, High Frequency Full Bridge FET Driver March 1995 Features Description • Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic SOIC and DIP

NEC Ga FET marking L

Contextual Info: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Contextual Info: 2SK1024-01 F U JI P O W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET F -II S E R IE S • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GSS = ± 30 V Guarantee • Avalanche-proof

mgfc39v5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964 6 .4 G H z BAND 8W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The MGFC39V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: f l l H A R R IS H S E M I C O N D U C T O R 4 8 1 80V/2.5A Peak, High Frequency Full Bridge FET Driver March 1995 Description Features • I P Independently Drives 4 N-Channel FET in Half Bridge o r Full Bridge Configurations T h e HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic S O IC and DIP

mj 1504 transistor

Abstract: AN569 MTV32N25E SMD310
Contextual Info: MOTOROLA Order this document by MTV32N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV32N25E TMOS POWER FET 32 AMPERES 250 VOLTS RDS on = 0.08 OHM N–Channel Enhancement–Mode Silicon Gate