FET 10A 600V Search Results

2SK2761

Abstract: mosfet 10a 600v 2SK2761-01MR
Contextual Info: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

2SK2761

Contextual Info: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

Contextual Info: FU JI 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V 10A 50W Outline Drawing > Features - IQ High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications

2SK2761-01MR

Abstract: 2SK2761
Contextual Info: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

Contextual Info: Preliminary Datasheet RJK60S2DPD 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0741EJ0003 Rev.0.03 Nov 30, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-resistance RDS on = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

Contextual Info: Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-resistance RDS on = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

Contextual Info: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)

Contextual Info: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)

matters

Contextual Info: Preliminary Datasheet RJK60S2DPD 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0741EJ0002 Rev.0.02 May 01, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A

Contextual Info: Preliminary Datasheet RJK60S2DPP-E0 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJK60S2DPP-E0 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0742EJ0002 Rev.0.02 May 01, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) Outline RENESAS Package code: PRSS0003AG-A

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

400V, DC INVERTER

Contextual Info: Targetdatasheet flow PIM 0+P, 600V, 10A Version 0102 V23990-P370-_01-PM B: with PFC/ mit PFC D: w/o PFC/ ohne PFC Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage

Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

035H

Abstract: 30ETH06 IRFP250 IRFPE30 Ice-100
Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

mosfet 10a 600v

Abstract: td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF
Contextual Info: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

Contextual Info: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

mos fet 120v 10A

Contextual Info: 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

IRGP50B60PDPBF

Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

30ETH06

Abstract: IRFP250 IRGP50B60PD
Contextual Info: PD - 94624A IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

Contextual Info: PRODUCT CATTALO' Æ u tro n N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35 0 SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

rdx*100n60

Abstract: RDX100N60 10A 600V MOS
Contextual Info: RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.