210UH Search Results
210UH Price and Stock
Samsung Electro-Mechanics CIGT201210UHR47MNEFIXED IND 470NH 3.6A 31MOHM SMD |
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CIGT201210UHR47MNE | Cut Tape | 937 | 1 |
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CIGT201210UHR47MNE | Reel | 20 Weeks | 60,000 |
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CIGT201210UHR47MNE | 54,804 |
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Samsung Electro-Mechanics CIGT201210UHR68MNEFIXED IND 680NH 3A 47 MOHM SMD |
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CIGT201210UHR68MNE | Reel | 120,000 |
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CIGT201210UHR68MNE | Reel | 20 Weeks | 120,000 |
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CIGT201210UHR68MNE |
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Samsung Electro-Mechanics CIGT201210UH1R0MNEFIXED IND 1UH 2.8A 71 MOHM SMD |
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CIGT201210UH1R0MNE | Cut Tape | 1 |
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CIGT201210UH1R0MNE |
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CIGT201210UH1R0MNE | 1,350 |
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Samsung Electro-Mechanics CIGT201210UHR33MNEFIXED IND 330NH 4A 26 MOHM SMD |
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CIGT201210UHR33MNE | Cut Tape | 1 |
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Samsung Electro-Mechanics CIGT201210UHR24MNEFIXED IND 240NH 4.4A 22MOHM SMD |
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CIGT201210UHR24MNE | Digi-Reel | 1 |
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CIGT201210UHR24MNE | Reel | 20 Weeks | 60,000 |
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CIGT201210UHR24MNE | 1,500 |
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210UH Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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R1111N
Abstract: R1111N181B r1111nxx1a
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EA-057-0006 150mA 210UHVLVWDQFH/ RXWSXW111N301B R1111N R1111NXX1A R1111Nxx1B R1111N R1111N181B | |
Contextual Info: /2:#12,6 #483P$#/'2 5(*8/$725 544541#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-058-0006 LOW NOISE 150mA LDO REGULATOR 544541#6(5,(6 OUTLINE |
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EA-058-0006 150mA 210UHVLVWDQFH# R1121N301B R1121N R1121NXX1A R1121Nxx1B | |
54b6
Abstract: 54B5 54B4 55b6 CE172
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EA-063-0006 210UHVLVWDQFH R5320G 54b6 54B5 54B4 55b6 CE172 | |
R1112N
Abstract: 0737R 1433u
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EA-059-0006 150mA 210UHVLVWDQFH/ R1112N R11X2N301B R1112N 0737R 1433u | |
54B4
Abstract: 54b5 55b4 4139 temperature R5321D 21018 RU54
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EA-062-0006 210UHVLVWDQFH# R5321D 54B4 54b5 55b4 4139 temperature R5321D 21018 RU54 | |
irg7r313u
Abstract: irg7r313 IRG7R313UPbF irg7r31 12A1000 EIA-541 IRFR120 JESD22-A114 igbt data
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IRG7R313UPbF EIA-481 EIA-541. EIA-481. irg7r313u irg7r313 IRG7R313UPbF irg7r31 12A1000 EIA-541 IRFR120 JESD22-A114 igbt data | |
Contextual Info: CUSTOMER TERMINAL RoHS LE AD Pb —FREE Sn96% , Ag4% Yes Yes PART MUST SURFACE A IN S E R T IN FU LLY more than you e xpect W0F TO RECOMMENDED IVidcom G R ID 0.031(7) [.8 0 ] [3 7 .1 2 8 /.1 7 7 [3 .2 5 /4 .5 0 ] DOT LOCATES TERM ELECTRICAL SPECIFICATIONS @ 25°C u n le s s o th e rw ise n o te d : |
OCR Scan |
210uH 100kHz, | |
smd diode B4
Abstract: 2n7002 smd diode 1N4148 SMD 16N50C3 b4 smd diode SG6961SZ Electrolytic Capacitor 120uf 450v varistor MOV1 sg6961 16N50
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SG6961 SG6961 IRO33 smd diode B4 2n7002 smd diode 1N4148 SMD 16N50C3 b4 smd diode SG6961SZ Electrolytic Capacitor 120uf 450v varistor MOV1 16N50 | |
DSAQContextual Info: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM |
Original |
IRGP4069PbF IRGP4069-EPbF O-247AD DSAQ | |
Contextual Info: PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability |
Original |
7636A IRG7IA13UPbF O-220 | |
Contextual Info: PD - 96437 AUTOMOTIVE GRADE AUIRGP4062D1 AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC Nominal = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses |
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AUIRGP4062D1 AUIRGP4062D1-E | |
Contextual Info: AUIRGP4062D1 AUIRGP4062D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C IC Nominal = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA |
Original |
AUIRGP4062D1 AUIRGP4062D1-E | |
Contextual Info: PD - 97747 IRG7CH73K10B-R Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 s Short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution |
Original |
IRG7CH73K10B-R | |
IRG7R313U
Abstract: irg7r313 irg7r31
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IRG7R313UPbF EIA-481 EIA-541. EIA-481. IRG7R313U irg7r313 irg7r31 | |
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AUIRGP4062D1
Abstract: Fast Recovery Rectifier, 300V .47 j 100 auirgp4062
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AUIRGP4062D1 AUIRGP4062D1-E Fast Recovery Rectifier, 300V .47 j 100 auirgp4062 | |
AUIRGB4062D1
Abstract: AUGB4062D1 AUIRGSL4062D1 AUIRGS4062D AUIRGB4062D
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AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 AUGB4062D1 AUIRGSL4062D1 AUIRGS4062D AUIRGB4062D | |
CQ1265RT
Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt
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FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt | |
1cz21h
Abstract: ic 1cz21h 1cz21h sharp PQ1CZ21H2ZPH RS50K Toho Electronics OP06040
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PQ1CZ21H2ZxH 100kHz) 1CZ21H2ZZH: 1CZ21H2ZPH: RS50k 2200F 1cz21h ic 1cz21h 1cz21h sharp PQ1CZ21H2ZPH RS50K Toho Electronics OP06040 | |
R1210N
Abstract: R1210N302C R1210N302D R1210N502C R1210N502D R1210N602C 76139 U33-14 m500ms P533
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EA-064-0006 OT-23-5 13Acqs 200mV 200mV 960mV 100mV R1210N R1210N302C R1210N302D R1210N502C R1210N502D R1210N602C 76139 U33-14 m500ms P533 | |
RR350
Abstract: S100-200
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Original |
IRGP4069DPbF IRGP4069D-EPbF O-247AD RR350 S100-200 | |
b5 SMD zener
Abstract: varistor 14 471 SG6961SZ diode 1N4148 SMD 16N50C3 16n50 capacitor 0.47uf 275v Electrolytic Capacitor 120uf 450v TRN0193 2n7002 smd
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SG6961 SG6961 IRO33 b5 SMD zener varistor 14 471 SG6961SZ diode 1N4148 SMD 16N50C3 16n50 capacitor 0.47uf 275v Electrolytic Capacitor 120uf 450v TRN0193 2n7002 smd | |
EER-4942
Abstract: EER4942 FSCQ1565RP 6D-22 N15V 35V 1A Transformer specification 2200uf/35V diode zd201 47k 1kv C102
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AB-63 FSCQ1565RP 90-270Vac) 90Vac EER4942 RT101 6D-22 BD101 IC101 FSCQ1565RP EER-4942 EER4942 6D-22 N15V 35V 1A Transformer specification 2200uf/35V diode zd201 47k 1kv C102 | |
irg7s313Contextual Info: PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability |
Original |
7402A IRG7S313UPbF EIA-418. irg7s313 | |
Contextual Info: CUSTOMER TERMINAL RoHS LE AD Pb —FREE S n96% , A g 4 X Yes Yes m o re th a n y o u e x p e c t IVidcom PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID .020 SQ.(5) P C11 .1 0 0 /. 150 L' a iJ [2 .5 4 /3 .8 1 ] DOT LOCATES TERM. #1 ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise noted: |
OCR Scan |
210uH 10kHz, 1250VAC, |