FERROELECTRIC RAM Search Results

"Ferroelectric RAM"

Abstract: ferroelectric ram FM1208S RAM word-line driver 1994 ferroelectric
Contextual Info: FM1208S FRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

"Ferroelectric RAM"

Abstract: FM1608S ferroelectric ram RAMTRON
Contextual Info: FM1608S FRAM Memory 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Features 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM's non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash

XLU2

Contextual Info: r ^ M $ T R FM1608SFRAM Memory O N 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Preliminary Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8 ,1 9 2 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells

TCA 720

Abstract: "Ferroelectric RAM" 1822-HEX A8-12 Ramtron International Corporation
Contextual Info: E C N A ADV FM1808S FRAM Memory 262,144-Bit Nonvolatile Ferroelectric RAM Product Preview Features 256K Nonvolatile Ferroelectric RAM Organized as 32,768 words x 8 bits • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Contextual Info: FM1608S FRAM Memory r^ M 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Ferroelectric RAM

Abstract: FM1208S
Contextual Info: FM1208SFRAM Memory Î^ IM IR O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Ferroelectric RAM

Contextual Info: FM1208S FRAM Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Contextual Info: HAR ü < '5,. FM 1408S FRAM Memory r^ M T R Ü N 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b ■ CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells

Ferroelectric RAM

Abstract: "Ferroelectric RAM" 755s015 TCA 356 1208S
Contextual Info: FM1208SFRAM Memory r ^ p M 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Ferroelectric RAM

Abstract: "Ferroelectric RAM" mtron til 081 1408S ferroelectric
Contextual Info: FM1408S FRAM Memory r^ M T R O IM 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b ■ CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation

Ferroelectric RAM

Abstract: 1208S FM1208S
Contextual Info: I FM1208SFRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification r^ p M T R O N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Contextual Info: OCT 2 j a FMx 1408FRAM Memory r ^ 3 M 16,384-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation U n ir T R O N Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2,048w x 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells

transistor A4t

Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
Contextual Info: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric

fm1408

Contextual Info: MAR i •: ',!< FM 1408/1608FRAM Memory r ^ M T R O 16,384- and 65,536-Bit Nonvolatile Ferroelectric RAMs Product Preview N Features ■ 16,384- and 65,536-Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 and 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric

1208S

Contextual Info: SñE J> 7555015 RAPITRON C ORP MIRON 000023b I S l f l H R AM ' T 1208SFRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells

FM1208S

Abstract: Ferroelectric RAM mtron "Ferroelectric RAM" ramtron FRAM
Contextual Info: F M 1 2 0 8 S F R A M M e m o ry r^ p M T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells

PJ 0416 1v

Abstract: til 3010 1208FRAM 7S5SG15
Contextual Info: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric

Ferroelectric RAM

Abstract: micron sram 5v 512*8
Contextual Info: 2 4 19W F M 1 2 0 8 F R A M F ^ M M e m o ry 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview T R O I M Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation with Two

ferroelectric

Contextual Info: Technical Paper The Endurance Performance of 0.5µ µm FRAM Products Authors: Fan Chu and Tom Davenport INTRODUCTION Ferroelectric random access memories FRAMs are nonvolatile memory devices that store data by using the bi-stable switchable polarization state of a ferroelectric material. Ferroelectric thin films

FM28V020-T

Contextual Info: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

flash "high temperature data retention" mechanism

Abstract: EEPROM retention testing FM24C16 flash Activation Energy
Contextual Info: Technology Note FM24C16 Data Retention Characterization – Updated 5/00 Overview Ramtron technology notes provide technical insight into the operation of ferroelectric memory technology. They explain the fundamental performance of one or more aspects of ferroelectric

"dual access" "nonvolatile memory" -RFID

Abstract: rfid reader 915MHZ WM72016 EPC gen2
Contextual Info: Preliminary WM72016 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access