FERROELECTRIC RAM Search Results
FERROELECTRIC RAM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 27LS03DM/B | Rochester Electronics LLC | 27LS03 - 64-Bit Low-Power Inverting-Output Bipolar RAM |
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| 27LS03/BEA | Rochester Electronics LLC | 27LS03 - 64-Bit Low-Power Inverting-Output Bipolar RAM - Dual marked (8605106EA) |
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| 6802/BQAJC | Rochester Electronics LLC | MC6802 - Microprocessor with Clock and Optional RAM |
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| MC68A02CL | Rochester Electronics LLC | MC68A02 - Microprocessor With Clock and Oprtional RAM |
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| 54S189J/C | Rochester Electronics LLC | 54S189 - 64-Bit Random Access Memory |
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FERROELECTRIC RAM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
XLU2Contextual Info: r ^ M $ T R FM1608SFRAM Memory O N 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Preliminary Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8 ,1 9 2 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells |
OCR Scan |
fm1608sfram536-bit180ns320ns+4 | |
Ferroelectric RAMContextual Info: FM1208S FRAM Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation |
OCR Scan |
fm1208s096-bit200ns400ns+4 | |
transistor A4t
Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
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OCR Scan |
755sd15agoqg711208fram096-bit+9 | |
fm1408Contextual Info: MAR i •: ',!< FM 1408/1608FRAM Memory r ^ M T R O 16,384- and 65,536-Bit Nonvolatile Ferroelectric RAMs Product Preview N Features ■ 16,384- and 65,536-Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 and 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric |
OCR Scan |
1408/1608fram536-bit10-year-80ns+3 | |
FM1208S
Abstract: Ferroelectric RAM mtron "Ferroelectric RAM" ramtron FRAM
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OCR Scan |
fm1208s096-bit200ns400ns+7 | |
PJ 0416 1v
Abstract: til 3010 1208FRAM 7S5SG15
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OCR Scan |
7s5sg151208fram096-bit512wx8b+7 | |
flash "high temperature data retention" mechanism
Abstract: EEPROM retention testing FM24C16 flash Activation Energy
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fm24c16flash "high temperature data retention" mechanismeeprom retention testingflash activation energy | |
"dual access" "nonvolatile memory" -RFID
Abstract: rfid reader 915MHZ WM72016 EPC gen2
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wm7201616kbitdual access" "nonvolatile memory" -rfidrfid reader 915mhz+1 | |
EBV8
Abstract: rfid reader 915MHZ S3 marking DIODE 8pin udfn
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wm7201616kbitwm72016-nbsd-dswm72016-nbsd-dstr+4 | |
FM18L08
Abstract: FM20L08 FM20L08-60-TG
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fm20l08128kx833mhzfm18l08+1 | |
FM20L08-60-TGC
Abstract: FM18L08 FM20L08
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fm20l08128kx833mhzfm20l08-60-tgc+1 | |
TCA 290
Abstract: FM20L08-60-TG1 FM20L08-60 FM18L08 FM20L08 FM20L08-60-TG
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fm20l08128kx833mhztca 290+4 | |
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Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process |
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fm20l08128kx833mhz | |
FM25040
Abstract: FM25040A FM25040A-G FM25040A-S
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fm25040afm25040a-sa40003sric0450+2 | |
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Contextual Info: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process |
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fm24c256256kb256kbit256-kilobit+1 | |
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Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process |
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fm1808256kb256kbit256-kilobit+1 | |
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Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process |
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fm1808256kb256kbit256-kilobit+1 | |
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Contextual Info: Preliminary FM25L256 256Kb FRAM Serial 3V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process |
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fm25l256256kb | |
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Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process |
Original |
fm160864-kilobitms-011 | |
FM1608-120-SGContextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process |
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fm1608fm1608-120-sg | |
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Contextual Info: Product Preview FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process |
Original |
fm18l08256kb256-kilobit | |
FM24C04
Abstract: FM24C04-P FM24C04-S FM24C64
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fm24c04nonvola50fm24c04-pfm24c04-s+1 | |
FM25040
Abstract: FM25640 FM25640-G FM25640-S
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fm2564064-kilobitfm25040fm25640-g+1 | |
FM25160
Abstract: FM25C160 FM25C160-S
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fm25c16016-kilobitfm25160fm25c160-s | |